Z. G. Qian < Z. G. Wang < Z. G. Wu

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 83.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000149 (2013)		Photoluminescence properties of porous InP filled with ferroelectric polymers
000351 (2012)		Wurtzite to zincblende transition of InN films on (011) SrTiO3 by decreasing trimethylindium flows
000381 (2012)		Tailoring the in-plane epitaxial relationship of InN films on (1 11)SrTiO3 substrates by substrate pretreatment
000997 (2010)		The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy
000A05 (2010)		Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density
000A51 (2010)		SELF-ASSEMBLING OF INAS QUANTUM DOTS ON GAAS(001) IN MOLECULAR BEAM EPITAXY
000B16 (2010)		Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density
000B24 (2010)		InN layers grown by MOCVD on SrTi03 substrates
000B75 (2010)		Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films
000C08 (2010)		Different growth mechanisms of bimodal InAs/GaAs QDs
000C25 (2010)		Blue-shift photoluminescence from porous InAlAs
000C34 (2010)		Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density
000C37 (2010)		A study of indium incorporation in In-rich InGaN grown by MOVPE
000D91 (2009)		Observation of the surface circular photogalvanic effect in InN films
001009 (2008)		Temperature dependence of surface quantum dots grown under frequent growth interruption
001094 (2008)		Mn-including InAs quantum dots fabricated by Mn implantation
001211 (2008)		Circular photogalvanic effect at inter-band excitation in InN
001399 (2007)		Fabrication of ZnO and its enhancement of charge injection and transport in hybrid organic/inorganic light emitting devices
001444 (2007)		Effect of inter-level relaxation and cavity length on double-state lasing performance of quantum dot lasers
001484 (2007)		Anomalous photoluminescence of InAs quantum dots implanted by Mn ions
001522 (2006)		Temperature dependence of surface quantum dots grown under frequent growth interruption

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List of associated KwdEn.i

Nombre de documents	Descripteur
62	Indium arsenides
55	Photoluminescence
49	Quantum dots
47	Gallium arsenides
46	Experimental study
41	III-V semiconductors
41	Molecular beam epitaxy
23	Aluminium arsenides
22	Atomic force microscopy
22	Crystal growth from vapors
22	Semiconductor materials
18	Ternary compounds
13	Thin films
12	Nanostructured materials
12	Nanostructures
11	Binary compounds
11	Self assembly
11	Temperature dependence
11	Temperature effects
10	Epitaxial layers
10	Growth mechanism
10	Self-assembly
9	Buffer layer
9	Multilayers
8	Morphology
8	Optical properties
7	III-V compound
7	Indium nitride
7	Quantum wires
7	Self-assembled layers
7	Spectral line shift
7	TEM
7	Thickness
7	Transmission electron microscopy
7	XRD
6	Heteroepitaxy
6	Inorganic compounds
6	Interdiffusion
6	Island structure
6	MOCVD
6	Microstructure
6	Rapid thermal annealing
6	Self organization
5	Annealing
5	Growth rate
5	Indium compounds
5	RHEED
5	Size effect
4	Crystal growth
4	Epitaxy
4	Indium phosphides
4	Quantum wells
4	Strained layer
4	Surface structure
4	Wetting
3	Characterization
3	Crystal orientation
3	Defects
3	Density
3	Doping
3	Excitons
3	Fabrication property relation
3	Film growth
3	Heterojunctions
3	Heterostructures
3	High density
3	Integrated intensity
3	Interband transitions
3	Line widths
3	Modulation
3	Optical anisotropy
3	Segregation
3	Stress relaxation
3	Surface morphology
3	Surfaces
3	Ultrathin films
2	Absorption edge
2	Absorption spectra
2	Adatoms
2	Aluminium compounds
2	Band offset
2	Chemical composition
2	Chromium
2	Coatings
2	Continuous wave lasers
2	Crystal seeds
2	Current density
2	Diffusion
2	Dimension spectrum
2	Dimensions
2	Dislocations
2	Electronic density of states
2	Energy gap
2	Energy levels
2	Fluctuations
2	Gallium nitrides
2	Ground states
2	Indium
2	Indium nitrides
2	Interface structure

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