Serveur d'exploration sur l'Indium - Analysis (Chine)

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Z. C. Huang < Z. C. Niu < Z. C. Wang  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000906 (2011) Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell
000991 (2010) The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy
000A00 (2010) The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots
000A08 (2010) Temperature dependence of hole spin relaxation in ultrathin InAs monolayers
000E08 (2009) Metamorphic InGaAs telecom lasers on GaAs
001315 (2007) Rapid photoluminescence quenching in GaInNAs quantum wells at low temperature
001735 (2005) Structural and optical properties of InAs/GaAs quantum dots emitting at 1.5μm
001747 (2005) Room temperature 1.25 μm emission from high indium content InxGa1-xAs/GaAs quantum wells grown by molecular beam epitaxy
001776 (2005) Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 μm (InyGa1-yAs/GaAs1-xSbx)/GaAs bilayer quantum wells
001930 (2004) The fabrication of self-aligned InAs nanostructures on GaAs(331)A substrates
001977 (2004) Optical characteristics of InAs quantum dots capped with short period GaAs/InAs superlattices and InGaAs combination layers
001A27 (2004) Effect of the InAlAs and InGaAs combination strain-reducing layer on 1.3 μm emission self-assembled InAs/GaAs quantum dots
001A55 (2003-12-15) Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices
001B51 (2003) Role of different cap layers tuning the wavelength of self-assembled InAs/GaAs quantum dots
001F59 (2001) Effect of InxGa1-xAs (0≤x≤0.4) capping layer on self-assembled 1.3 μm wavelength InAs/GaAs quantum islands
002146 (2000) 1.35 μm photoluminescence from In0.5Ga0.5As/GaAs islands grown by molecular beam epitaxy via cycled (InAs)1/(GaAs)1 monolayer deposition

List of associated KwdEn.i

Nombre de
documents
Descripteur
12Indium arsenides
10Gallium arsenides
10Molecular beam epitaxy
10Photoluminescence
9III-V semiconductors
8Quantum dots
7Experimental study
6Atomic force microscopy
6Binary compounds
6Semiconductor materials
5Crystal growth from vapors
4Ternary compounds
3Gallium Arsenides
3Indium Arsenides
3Nanostructured materials
3Optical properties
2Aluminium arsenides
2Band structure
2Buffer layer
2Epitaxial layers
2Excited states
2III-V compound
2Inorganic compounds
2Island structure
2Monolayers
2Nanostructures
2Nonlinear refraction
2Quantum wells
2Self-assembled layers
2Temperature dependence
2Thickness
2Thin films
2Z scan
1Alignment
1Ambient temperature
1Anomaly
1Arsenides
1Atomic layer method
1Bilayers
1Charge carrier recombination
1Charge carrier trapping
1Charge transfer
1Coatings
1Computerized simulation
1Conduction bands
1Coverage rate
1Current density
1Dark current
1Deformation
1Effective mass
1Electric fields
1Electro-optical effects
1Electron mobility
1Electron scattering
1Electron temperature
1Electron-hole recombination
1Energy-level transitions
1Gallium antimonides
1Gallium compounds
1Gallium nitrides
1Growth mechanism
1Heteroepitaxy
1High field
1Indium compounds
1Indium nitrides
1Interface states
1Internal field
1Laser diodes
1Localized states
1Low temperature
1Luminescence decay
1Luminescence quenching
1Microstructure
1Monte Carlo methods
1Morphology
1Multiple quantum well
1Nitrogen additions
1Non radiative recombination
1Nonlinear absorption
1Nonlinear optics
1Nonlinear refractive index
1Optical constants
1Optical materials
1Optical microscopy
1Phonon scattering
1Photovoltaic cell
1Photovoltaic effects
1Pseudopotential methods
1Quantum wires
1RHEED
1Radiative transition
1Rate equation
1Refractive index
1Relaxation time
1Self alignment
1Self assembly
1Semiconductor lasers
1Semiconductor superlattices
1Short circuit currents
1Solar cells

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