Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « YONGGE CAO »
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YONGGANG ZHANG < YONGGE CAO < YONGGUANG WANG  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 5.
Ident.Authors (with country if any)Title
000A36 (2010) Structure and optical properties of InN and InAlN films grown by rf magnetron sputtering
000A99 (2010) Low content indium-doped zinc oxide films with tunable work function fabricated through magnetron sputtering
000B93 (2010) Effects of hydrogen annealing on the structural, optical and electrical properties of indium-doped zinc oxide films
000C87 (2009) The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells
000D70 (2009) Physical properties and growth kinetics of co-sputtered indium-zinc oxide films

List of associated KwdEn.i

Nombre de
documents
Descripteur
3Cathode sputtering
3Radiofrequency
3Radiofrequency sputtering
3Zinc oxide
2Atomic force microscopy
2Doping
2Electrical conductivity
2Energy gap
2Impurity density
2Island structure
2Optical characteristic
2Optical properties
2Roughness
2Scanning electron microscopy
2Substrat temperature
2Transparency
1Annealing
1Annealing temperature
1Band structure
1Bowing parameter
1Burstein Moss effect
1Carrier density
1Cathodic sputtering
1Crystallinity
1Damaging
1Density matrix
1Doped materials
1Electrical characteristic
1Electrical properties
1Finite difference method
1Gallium arsenides
1Growth mechanism
1Hall conductivity
1Hydrogen
1Indium Gallium Arsenides Mixed
1Indium addition
1Indium additions
1Indium nitride
1Indium oxide
1Luttinger Kohn model
1Microstructure
1Near infrared radiation
1Optical amplification
1Population inversion
1Quantum wells
1Segregation
1Spectral line shift
1Thickness
1Thin films
1Transparent material
1Valence bands
1Work function
1Work functions
1XRD

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
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