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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « YIXIN JIN »
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YIWU LIU < YIXIN JIN < YIXIN WANG  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 17.
Ident.Authors (with country if any)Title
000733 (2011) Probing into the effect of Auger recombination mechanism on zero bias resistance-area product in In1-xGaxAs detector
000E20 (2009) Investigation on growth related aspects of catalyst-free InP nanowires grown by metal organic chemical vapor deposition
000F05 (2009) Effect of buffer thickness on properties of In0.8Ga0.2As/InP with two-step growth technique
000F62 (2009) A study of two-step growth and properties of In0.82Ga0.18As on InP
001123 (2008) Improved field emission characteristic of carbon nanotubes by an Ag micro-particle intermediation layer
001186 (2008) Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD
001187 (2008) Effect of buffer growth temperature on crystalline quality and optical property of In0.82Ga0.18As/InP grown by LP-MOCVD
001A31 (2004) Design of a resonant-cavity-enhanced GaInAsSb/GaSb photodetector
001A41 (2004) Calculation of the R0A product in n+-n-p and p+-p-n GaAnAsSb infrared detectors
001C13 (2003) Electronic structure of vertically stacked InAs self-assembled quantum dots by deep level transient spectroscopy
001C29 (2003) Deep level transient spectroscopy of vertically stacked InAs/Al0.5Ga0.5As self-assembled quantum dots
001C42 (2003) Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors
002224 (1999) The analysis of the performance for P-p-n and N-n-p hetero- and homojunction GaSb/Ga0.8In0.2As0.19Sb0.81 photodetectors
002229 (1999) Study of overgrowth heterostructure InSb/GaAs by scanning electron acoustic microscopy
002408 (1998) Growth and characterization of InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD
002425 (1998) Analysis of the R0A product and detectivity in a GaInAsSb infrared photovoltaic detector
002589 (1996) Study of GaInAsSb epilayer by scanning electron acoustic microscopy

List of associated KwdEn.i

Nombre de
documents		Descripteur
8Experimental study
8Gallium arsenides
7Epitaxial layers
7Indium arsenides
7MOCVD
6Indium antimonides
6Semiconductor materials
5Gallium antimonides
5Scanning electron microscopy
4Binary compounds
4Carrier density
3Buffer layer
3Hall effect
3Photodetector
3Photoluminescence
3Quaternary compound
3Quaternary compounds
3XRD
2Acoustic microscopy
2Binary compound
2Carrier mobility
2Charge carrier trapping
2Chemical composition
2Crystal growth from vapors
2Crystal morphology
2DLTS
2Gallium Indium Arsenides Mixed
2Heterojunctions
2III-V semiconductors
2Indium Antimonides arsenides
2Indium phosphide
2Infrared detector
2Mismatch lattice
2Performance evaluation
2Photodetectors
2Quantum dots
2Raman spectra
2Self-assembled layers
2Stacking sequence
2Surface recombination
2Surfaces
2Thick films
2Thin films
2p n junctions
1Aluminium arsenides
1Antireflection coating
1Atmospheric pressure
1Auger recombination
1Bandwidth
1CV characteristic
1CVD
1Carbon nanotubes
1Cavity resonator
1Characterization
1Compressive stress
1Conduction bands
1Cost lowering
1Current density
1Deposition process
1Doped materials
1Droplets
1Electric field
1Electrochemical method
1Electron energy level
1Electron mobility
1Electronic structure
1Energy levels
1Epitaxy
1Field emission
1Field emitter
1Figure of merit
1Frequency shift
1Gallium Antimonides arsenides
1Gallium Indium Arsenides
1Gallium Indium Arsenides Antimonides
1Grain boundaries
1Growth rate
1Heterojunction
1Homojunctions
1Image forming
1Infrared detectors
1Interfaces
1Large scale
1Low pressure
1Microelectronic fabrication
1Misfit dislocations
1Morphology
1Nanoelectronics
1Nanostructures
1Nanotechnology
1Nanotube devices
1Nanowires
1Noise
1Optical coating
1Optical properties
1Optoelectronic device
1Phonons
1Photovoltaic cell
1Photovoltaic effects
1Quantum efficiency

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