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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Y. Yang »
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Y. Yan < Y. Yang < Y. Yao  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
000054 (2013) Unexpected surface implanted layer in static random access memory devices observed by microwave impedance microscope
000F82 (2008) Weak Localization in Indium Nitride Films
001078 (2008) Optical transitions of InAs/In0.36Ga0.64As/GaAs(311B) surface quantum dots clearly identified by the piezoreflectance technique
001079 (2008) Optical properties of InAs/In0.15Ga0.85As quantum dots-in-a-well studied by piezomodulated reflectance spectroscopy
001558 (2006) Refractive indices of textured indium tin oxide and zinc oxide thin films
001F15 (2001) Photoelectric conversion property of covalent-attached multilayer self-assembled films fabricated from diazoresin and fullerol
002350 (1998) The study of single mode 650nm AlGaInP quantum well laser diodes for DVD
002398 (1998) High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD
002400 (1998) High performance 1.55μm InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method

List of associated KwdEn.i

Nombre de
documents		Descripteur
4Thin films
3Indium Phosphides
3Injection laser
3MOVPE method
3Quantum wells
3Quaternary compounds
3Semiconductor lasers
2Aluminium Phosphides
2Binary compounds
2Electrical conductivity
2Gallium Phosphides
2Indium arsenides
2Molecular beam epitaxy
2Optical transition
2Photoluminescence
2Quantum dots
2Semiconductor materials
2Spectral line shift
1Absorption spectroscopy
1Accumulation layers
1Actinides
1Atomic force microscopy
1Bilayers
1Buffer layer
1Doping
1Effective mass model
1Electron-phonon interactions
1Ellipsometry
1Energy-level transitions
1Experimental study
1Experiments
1Fullerenes
1Gallium Arsenides
1Gallium arsenides
1II-VI semiconductors
1Impurity density
1Indium additions
1Indium nitride
1Indium oxides
1Inorganic compounds
1Interband transitions
1Irradiation
1Line broadening
1Low pressure
1MIM structures
1Microelectronics
1Microwave conductivity
1Modulation
1Photocurrents
1Photoelectric conversion
1Piezoreflectance
1Protective coatings
1Random-access storage
1Red shift
1Reflection spectrum
1Refractive index
1Relaxation time
1Resins
1Roughness
1Scanning capacitance microscopy
1Scanning microscope
1Self assembly
1Semiconductor devices
1Single mode laser
1Spectroscopic analysis
1Spin relaxation
1Sputtering
1Strained layer
1Strained quantum well
1Substrates
1Surface layers
1Surface morphology
1Ternary compounds
1Theory
1Thickness
1Tin oxides
1Transition element compounds
1Transmittance
1Vacuum arcs
1Weak localisation
1Zinc oxides

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
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