IndiumV3, Chine, Analysis, indexItem, Author.i, Y. W. Zhao

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List of bibliographic references

Number of relevant bibliographic references: 9.

Ident.	Authors (with country if any)	Title
001224 (2008)		Annihilation of deep level defects in InP through high temperature annealing
001644 (2006)		Electron irradiation-induced defects in InP pre-annealed at high temperature
001804 (2005)		Hydrogen indium vacancy complex VInH4 in n-type InP studied by positron-lifetime
001A42 (2004)		Annealing ambient controlled deep defect formation in InP
001C69 (2002-08-15)		Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance
001D45 (2002)		Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour
002134 (2000)		Carrier mobility distribution in annealed undoped LEC InP material
002296 (1998-11-15)		Positron-lifetime study of compensation defects in undoped semi-insulating InP
002326 (1998-04-27)		Formation of PIn defect in annealed liquid-encapsulated Czochralski InP

List of associated KwdEn.i

Nombre de documents	Descripteur
7	Annealing
5	Experimental study
5	III-V semiconductors
4	Defect formation
4	Defect states
4	Indium phosphides
4	Semiconductor materials
3	Binary compounds
3	DLTS
3	Deep energy levels
3	Deep level
3	Indium compounds
2	Charge compensation
2	Crystal growth from melts
2	Defect absorption spectra
2	Impurity absorption spectra
2	Impurity states
2	Indium phosphide
2	Infrared spectra
2	Iron
2	Iron additions
2	Positron annihilation
2	Thermostimulated conduction
2	Vacancies
1	Annealing temperature
1	Binary compound
1	Carrier density
1	Carrier mobility
1	Complex defect
1	Crystal defects
1	Czochralski method
1	Defect annihilation
1	Defect characterization
1	Defect density
1	Defect detection
1	Defect level
1	Diffusion
1	Donor center
1	Doping
1	Electrical conductivity
1	Electrical properties
1	Electron beam
1	Electron irradiation
1	Fourier transform spectra
1	Hall conductivity
1	Hall effect
1	Heat treatments
1	High temperature
1	Illumination
1	Impurity-defect interactions
1	Impurity-vacancy interactions
1	Inorganic compound
1	Ionization potential
1	Iron phosphides
1	Irradiation defect
1	Liquid encapsulation
1	Phosphorus
1	Photoinduction
1	Photoluminescence
1	Point defects
1	Radiation effect
1	Stoichiometry
1	Temperature dependence
1	Thermal annealing
1	Transition metal
1	Valence
1	Wafers

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
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   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    Y. W. Zhao
}}

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Serveur d'exploration sur l'Indium - Analysis (Chine)Index « Auteurs » - entrée « Y. W. Zhao »

List of bibliographic references

List of associated KwdEn.i

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri

Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Y. W. Zhao »