Serveur d'exploration sur l'Indium - Analysis (Chine)

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List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
000489 (2012) Influence of substrates on the structural and optical properties of ammonia-free chemically deposited CdS films
000B97 (2010) Effect of substrate temperature on the structural and electrical properties of CIGS films based on the one-stage co-evaporation process
000C09 (2010) Dielectric functions and the interband critical points of InAs0.05Sb0.95 film grown by a modified LPE technique
000D40 (2009) Small angle X-ray scattering studies on structural evolution during calcination of sol-gel ITO nano-powders
000D61 (2009) Preparation and properties of CuInxGa1-xSe2 thin-film solar cell absorbers from selenization of Ga-rich electrodeposited precursors
001043 (2008) Self-pulsation in a two-section DFB laser with a varied ridge width
001092 (2008) Modified LPE technique growth and properties of long wavelength InAs0.05Sb0.95 thick film
001372 (2007) Influence of different precursor surface layers on Cu(In1- xGax)Se2 thin film solar cells
001A05 (2004) High-power vertical cavity surface emitting laser with good performances

List of associated KwdEn.i

Nombre de
documents
Descripteur
3Thickness
3XRD
2Absorption coefficients
2Carrier density
2Indium Arsenides
2LPE
2Microstructure
2Raman spectra
2Roughness
2Scanning electron microscopy
2Solar cell
2Solar cells
2Thick films
2Thin films
1Annealing temperature
1Application
1Arsenic additions
1Atomic force microscopy
1Binary compounds
1Cadmium sulfide
1Calcination
1Characterization
1Chemical bath deposition
1Copper Gallium Indium Selenides Mixed
1Copper Indium Gallium Selenides
1Copper selenides
1Critical points
1Crystal structure
1Dielectric function
1Diffuse reflection
1Diffusion
1Distributed feedback lasers
1Divergence angles
1E1-transitions
1E2-transitions
1Electric conductivity
1Electrical conductivity
1Electron mobility
1Energy-level splitting
1Experimental study
1Fourier transform spectra
1Fractals
1Gallium Arsenides
1Gallium Phosphides
1Gallium selenides
1Grain boundaries
1Grain size
1Growth mechanism
1Hall effect
1Heat treatments
1High power lasers
1High temperature
1Holding time
1III-V semiconductors
1Illumination
1Impurities
1Indium Phosphides
1Indium antimonides
1Indium oxide
1Indium selenides
1Infrared laser
1Infrared spectra
1Interband transitions
1Lattice dynamics
1Light emission
1Mirrors
1Nanopowder
1Output power
1Preparation
1Pumping (laser)
1Quantum yield
1Quaternary compounds
1Raman spectrum
1Reliability
1Secondary ion mass spectra
1Self-pulsing
1Semiconducting indium compounds
1Semiconductor lasers
1Semiconductor materials
1Small angle X ray scattering
1Sol-gel process
1Spectroscopic ellipsometry
1Spin-orbit interactions
1Substrates
1Surface layer
1Surface structure
1Temperature dependence
1Theory
1Thermal annealing
1Thin film
1Thin film cell
1Tin oxide
1Vapor deposition
1Vertical cavity surface emitting lasers (VCSEL)
1X ray diffraction
1X ray fluorescence

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