Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Y. Shi »
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Y. Shen < Y. Shi < Y. Su  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
000520 (2012) Growth and characterization of InGaN nanodots hybrid with InGaN/GaN quantum wells
001112 (2008) Influence of mechanical agitation on ZnSe electrodeposition in H2SeO3-ZnSO4 aqueous solution
001265 (2007) The high mobility InN film grown by MOCVD with GaN buffer layer
001370 (2007) Initial stages of the cubic-InN growth with the technique of the pre-deposition of indium
001501 (2006) Two-dimensional electron gas densities in AlGaN/AlN/GaN heterostructures
001513 (2006) Theoretical study of improved two-dimensional electron gas density in AlGaN/GaN/AlGaN double heterostructure
001703 (2005) Thermal annealing of InN films grown by metal-organic chemical vapor deposition
001749 (2005) Quantum and transport scattering times in modulation-doped AlxGa1-xN/GaN single quantum wells
001865 (2005) A novel InxGa1-xN/InN heterostructure field-effect transistor with extremely high two-dimensional electron-gas sheet density
001915 (2004-02-23) Comment on Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures [Appl. Phys. Lett. 80, 2684 (2002)]
001B37 (2003) Subbands transport of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
001B71 (2003) Ohmic contact and interfacial reaction of Ti/Al/Pt/Au metallic multi-layers on n-AlxGa1-xN/GaN heterostructures
001C20 (2003) Effect of surface treatments on Schottky contact on n-AlxGa1-xN/GaN heterostructures

List of associated KwdEn.i

Nombre de
documents
Descripteur
9Indium nitrides
7Gallium nitrides
6Aluminium nitrides
6Inorganic compounds
5Experimental study
5Semiconductor materials
4Binary compounds
4Heterostructures
4III-V semiconductors
4Ternary compounds
4XRD
3Modulation doping
3Poisson equation
3Quantum wells
3Scanning electron microscopy
3Two-dimensional electron gas
2Annealing
2Atomic force microscopy
2Barrier layer
2Buffer layer
2Gold
2IV characteristic
2Indium compounds
2Interfacial layer
2MOCVD
2Magnetoresistance
2Photoluminescence
2Platinum
2Schroedinger equation
2Self consistency
2Subband
2Thin films
2Transport processes
1Absorption spectra
1Aluminium
1Aluminium compounds
1Ambient temperature
1Ammonia
1Aqueous solutions
1Band structure
1Barrier height
1CVD
1Carrier density
1Chemical treatment
1Comparative study
1Compressive stress
1Computing method
1Conduction band
1Contact resistance
1Critical phenomena
1Crystal growth from solutions
1Crystal growth from vapors
1Crystal nucleation
1Crystal structure
1Cubic lattices
1Doping profile
1Electrical characteristic
1Electrical properties
1Electrodeposition
1Electrolytes
1Electron distribution
1Electron gas model
1Electron-defect interactions
1Electronic properties
1Electronic structure
1Energy gap
1Experimental result
1Field effect transistor
1Field effect transistors
1Films
1Gallium compound
1Gallium compounds
1Gallium nitride
1Growth mechanism
1Hall mobility
1Hydrogen Selenites
1III-V compound
1Indium compound
1Indium nitride
1Infrared spectra
1Integrated intensity
1Interface reaction
1Line widths
1Low pressure
1Metal-semiconductor contacts
1Metallic thin films
1Metals
1Mirrors
1Misfit dislocations
1Multilayers
1Nanodot
1Nitrides
1Nitrogen compounds
1Ohmic contacts
1Operating conditions
1Optical absorption
1Phase separation
1Piezoelectricity
1Polarization mode
1Quantum transport

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