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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Y. S. Lin »
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Y. S. Li < Y. S. Lin < Y. S. Wang  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 5.
Ident.Authors (with country if any)Title
001A52 (2003-12-29) Breakdown characteristics of InP/InGaAs composite-collector double heterojunction bipolar transistor
002017 (2000-05-22) In0.34Al0.66As0.85Sb0.15/δ(n+)-InP heterostructure field-effect transistors
002156 (1999-11-29) Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer
002169 (1999-09-13) High breakdown voltage symmetric double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor
002323 (1998-05) Electrical characteristics of heterostructure-emitter bipolar transistors using spacer layers

List of associated KwdEn.i

Nombre de
documents		Descripteur
5Experimental study
5III-V semiconductors
5Indium compounds
4Gallium arsenides
3Gallium compounds
2Aluminium compounds
2Conduction bands
2Energy gap
2Heterojunction bipolar transistors
2High electron mobility transistors
2MOCVD coatings
2Semiconductor growth
1CVD
1Electric breakdown
1Electron mobility
1Field effect transistors
1Interface states
1Leakage currents
1MOCVD
1Schottky barriers
1Semiconductor device breakdown
1Semiconductor heterojunctions
1Surface recombination
1semiconductor device breakdown

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
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