Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Y. Q. Chen »
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Y. Peng < Y. Q. Chen < Y. Q. Li  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 6.
Ident.Authors (with country if any)Title
001934 (2004) Synthesis of tin-doped indium oxide nanowires by self-catalytic VLS growth
001B95 (2003) High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxy
001F09 (2001) Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasers
001F44 (2001) Gsmbe growth of InGaP/(In)GaAs modulation-doped heterostructures and their applications to HEMT and HHMT
001F66 (2001) Characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE
001F68 (2001) Band-structure and optical gain for InAsp/In(GaAs)P MQW laser structures

List of associated KwdEn.i

Nombre de
documents
Descripteur
5Gallium arsenides
5Indium arsenides
4GSMBE method
3Gallium phosphides
3Indium phosphides
3Quaternary compounds
3Semiconductor lasers
3Ternary compounds
2Experimental study
2Gallium phosphide
2High electron mobility transistor
2Indium phosphide
2Infrared laser
2Laser diodes
2Microelectronic fabrication
2Molecular beam epitaxy
2Output power
2Performance evaluation
2Pseudomorphic transistor
2Quantum well lasers
2Ternary compound
1Band structure
1Binary compound
1Binary compounds
1Catalysis
1Characterization
1Doping
1Enhancement mode
1Field emission microscopy
1Gain
1Growth mechanism
1High hole mobility transistor
1IV characteristic
1Impurities
1Indium oxides
1Low noise amplifier
1Memory effect
1Mismatch lattice
1Modulation doping
1Multiple quantum well
1Nanowires
1Noise figure
1Optical gain
1Optimization
1Photoluminescence
1Scanning electron microscopy
1Strained quantum well
1Synthesis
1Theoretical study
1Threshold current
1Tin additions
1Transconductance
1Vapor deposition
1Voltage threshold
1Waveguide lasers

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