Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Y. P. Zeng »
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Y. P. Sun < Y. P. Zeng < Y. P. Zhang  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 28.
[0-20] [0 - 20][0 - 28][20-27][20-40]
Ident.Authors (with country if any)Title
000763 (2011) Optically induced current oscillation in a modulation-doped field-effect transistor embedded with InAs quantum dots
000A51 (2010) SELF-ASSEMBLING OF INAS QUANTUM DOTS ON GAAS(001) IN MOLECULAR BEAM EPITAXY
000A93 (2010) Magnetoresistance in a nominally undoped InGaN thin film
001250 (2007) Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well
001318 (2007) Pseudospin in Si δ-doped InAlAs/InGaAs/InAlAs single quantum well
001579 (2006) Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness
001648 (2006) Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy
001709 (2005) The effect of the AlxGa1-xN/AIN buffer layer on the properties of GaN/Si(111) film grown by NH3-MBE
001791 (2005) Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness
001A42 (2004) Annealing ambient controlled deep defect formation in InP
001B13 (2003-02-03) Mode splitting in photoluminescence spectra of a quantum-dot-embedded microcavity
001B90 (2003) In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate
001B91 (2003) In0.25Ga0.75As films growth on the thin GaAs/AlAs buffer layer on the GaAs(0 0 1) substrate
001C24 (2003) Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs (001) substrate
001C88 (2002-04-29) Zero-field spin splitting in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov-de Haas measurements
001E29 (2001-09-17) Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates
001E37 (2001-08-27) Longitudinal optic phonon-plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates
002068 (2000) Self-assembled InAs quantum wires on InP(001)
002115 (2000) Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice
002122 (2000) Effect of rapid thermal annealing on InGaAs/GaAs quantum wells
002232 (1999) Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures

List of associated KwdEn.i

Nombre de
documents
Descripteur
19III-V semiconductors
18Experimental study
18Gallium arsenides
17Indium arsenides
13Photoluminescence
12Molecular beam epitaxy
7Binary compounds
7Ternary compounds
7Thin films
6Aluminium arsenides
6Epitaxial layers
6Semiconductor materials
6XRD
5Buffer layer
5Crystal growth from vapors
5Indium compounds
5Quantum dots
4Atomic force microscopy
4III-V compound
4Rapid thermal annealing
4Superlattices
4Temperature dependence
4Transmission electron microscopy
3Aluminium compounds
3Crystal growth
3High electron mobility transistors
3Interdiffusion
3Multilayers
3Nanostructured materials
3Optical properties
3Quantum dot
3Quantum wires
3Semiconductor quantum dots
3Shubnikov-de Haas effect
3TEM
3Thickness
3Two-dimensional electron gas
2Binary compound
2Carrier mobility
2Defect formation
2Diffusion
2Dislocations
2Films
2Gallium Arsenides
2Growth mechanism
2Hall effect
2Indium Arsenides
2Indium phosphides
2Inorganic compounds
2Interface states
2Low temperature
2Magnetic field effects
2Magnetoresistance
2Oscillations
2Photodetectors
2Planar doping
2Quantum wells
2RHEED
2Self assembly
2Self-assembly
2Semiconductor superlattices
2Size effect
2Subband
2Superlattice
2Ternary compound
2Ultrathin films
1Aluminium Gallium Arsenides Mixed
1Aluminium nitrides
1Antisite defects
1Asymmetry
1Barrier layer
1Beats
1Bistability
1Characterization
1Chemical composition
1Conduction bands
1Cracks
1Cross section
1Crystal defects
1Crystal growth from melts
1Crystal-phase transformations
1DLTS
1Dark conductivity
1Defect characterization
1Defect detection
1Defects
1Deformation
1Density
1Dimension spectrum
1Doping
1Double barrier structure
1Electric conductivity
1Electrical conductivity
1Electrical properties
1Electron density
1Electron spin polarization
1Emission spectroscopy
1Experiments
1Field effect transistor
1Film growth

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