IndiumV3, Chine, Analysis, indexItem, Author.i, Y. Liu

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List of bibliographic references

Number of relevant bibliographic references: 16.

Ident.	Authors (with country if any)	Title
000360 (2012)		Triple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials
000382 (2012)		Tailoring martensitic transformation and martensite structure of NiMnIn alloy by Ga doping In
000E75 (2009)		Fabrication and modulation characteristics of 1.3 μm p-doped InAs quantum dot vertical cavity surface emitting lasers
000E77 (2009)		Fabrication and Characterization of 1.3-μm InAs Quantum-Dot VCSELs and Monolithic VCSEL Arrays
000F77 (2009)		1.3-μm InAs Quantum Dot Vertical Cavity Surface Emitting Lasers with Planar Electrodes Configuration
001043 (2008)		Self-pulsation in a two-section DFB laser with a varied ridge width
001800 (2005)		In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy
001921 (2004)		Tunneling characteristics of octadecyl derivatives on tin and indium electrodes
001A05 (2004)		High-power vertical cavity surface emitting laser with good performances
001A54 (2003-12-22)		InN island shape and its dependence on growth condition of molecular-beam epitaxy
001A66 (2003-10-15)		Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy
001D51 (2002)		Numerical simulation of macrosegregation of indium phase in rapidly solidified Al-In hypermonotectic sheets
002381 (1998)		Microcavity effect and InGaAs/InGaAsP MQW microdisk laser
002386 (1998)		Linewidth in microdisk laser
002388 (1998)		Investigation of 980nm GaInAs/GaAs/GaInP QW high power lasers
002595 (1996)		Preparation of nanocrystalline indium powders by use of γ-ray radiation

List of associated KwdEn.i

Nombre de documents	Descripteur
7	Binary compounds
7	Semiconductor lasers
6	Indium Arsenides
4	Experimental study
4	Gallium Arsenides
4	Output power
3	Ambient temperature
3	Frequency response
3	Gallium Phosphides
3	III-V semiconductors
3	Indium Phosphides
3	Island structure
3	Oxides
3	Quantum dots
3	Quaternary compounds
3	Surface emitting lasers
3	Ternary compounds
3	Vertical cavity laser
2	Crystal structure
2	Frequency measurement
2	Indium compounds
2	Molecular beam epitaxy
2	Multiple quantum well
2	Semiconductor epitaxial layers
2	Temperature dependence
2	Threshold current
2	Wetting
1	Ab initio calculations
1	Aluminium alloy
1	Angle measurement
1	Atomic force microscopy
1	Binary alloy
1	Blende structure
1	Capilary tunnel junctions
1	Casting
1	Contact angle
1	Continuous wave
1	Critical points
1	Critical temperature
1	Cubic lattices
1	Curie point
1	Current density
1	Dislocation core
1	Dislocation structure
1	Distributed feedback lasers
1	Divergence angles
1	Electric conductance
1	Electric conductivity
1	Electrodes
1	Electron diffraction
1	Electron tunneling
1	Experiments
1	Far field
1	Gallium additions
1	Gallium compounds
1	Gallium nitride
1	Growth mechanism
1	High power
1	High power lasers
1	High speed
1	High temperature
1	Indium Sulfates
1	Indium additions
1	Indium alloy
1	Indium nitride
1	Indium nitrides
1	Infrared laser
1	Inorganic compounds
1	Iodooctadecane
1	Lattice distortion
1	Lattice parameters
1	Light emission
1	Low pressure
1	MOVPE method
1	Macrosegregation
1	Magnetic measurement
1	Martensite
1	Martensitic transformations
1	Measurement systems
1	Microstructure
1	Mirrors
1	Misfit dislocations
1	Modulated structure
1	Molecular junctions
1	Monolithic integrated circuits
1	Nanocrystal
1	Nondecanoic acid
1	Nucleation
1	Numerical method
1	Numerical simulation
1	Octadecanol
1	Octadecylamine
1	Octadecylmercaptan
1	Optimization
1	Optimization method
1	Organic compounds
1	Partial dislocation
1	Particle separation
1	Particle size
1	Phase transformations

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List of bibliographic references

List of associated KwdEn.i

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri

Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Y. Liu »