Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Y. L. Zheng »
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Y. L. Zhen < Y. L. Zheng < Y. L. Zhu  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
000D67 (2009) Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE
000D81 (2009) Performance of gas source MBE-grown wavelength-extended InGaAs photodetectors with different buffer structures
001810 (2005) Heat management of MBE-grown antimonide lasers
001B30 (2003) The effects of (NH4)2S passivation treatments on the dark current-voltage characteristics of InGaAsSb PIN detectors
001F25 (2001) Mid-infrared GaInAsSb photodetector grown by solid source molecular beam epitaxy
001F27 (2001) MBE grown 2.0 μm InGaAsSb/AlGaAsSb MQW ridge waveguide laser diodes
002501 (1997) MBE growth and characterization of high-quality GaInAsSb/AlGaAsSb strained multiple quantum well structures
002707 (1995) Molecular beam epitaxial growth, characterization and performance of high-detectivity GaInAsSb/GaSb PIN detectors operating at 2.0 to 2.6 μm

List of associated KwdEn.i

Nombre de
documents
Descripteur
5Gallium antimonides
5Gallium arsenides
5Indium antimonides
5Indium arsenides
5Molecular beam epitaxy
3Aluminium antimonides
3Dark current
3Experimental study
3III-V semiconductors
3Multiple quantum well
3Quaternary compound
2Aluminium arsenides
2Binary compound
2Crystal growth from vapors
2GSMBE method
2Growth mechanism
2Infrared detector
2Microelectronic fabrication
2Multilayers
2Performance evaluation
2Photodetector
2Photodetectors
2Photodiodes
2Quaternary compounds
2Semiconductor lasers
1Ambient temperature
1Arsenic Antimonides
1Arsenides
1Buffer layer
1Characterization
1Crystal perfection
1Crystal structure
1Detectors
1Digital simulation
1Doping
1Emission spectra
1Energy gap
1Finite element method
1Frequency response
1Gallium Antimonides
1Heterojunctions
1Homojunctions
1III-V compound
1Illumination
1Indium Arsenides
1Indium compounds
1Injection laser
1Laser diodes
1Mid infrared radiation
1Molecular beam condensation
1Nanostructured materials
1Operating mode
1Optical waveguides
1Optimization
1Passivation
1Photoluminescence
1Production process
1Quantum cascade laser
1Ridge waveguides
1Semiconductor materials
1Solid source molecular beam epitaxy method
1Spectral response
1Strained quantum well
1Superlattices
1Temperature dependence
1Temperature distribution
1Theoretical study
1Thermal conductivity
1Thickness control
1Thin films
1Two-dimensional electron gas
1Voltage current curve
1XRD
1p i n diode
1p i n photodiodes

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