Y. K. Li < Y. K. Su < Y. K. Tu

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 28.
[0-20] [0 - 20][0 - 28][20-27][20-40]

Ident.	Authors (with country if any)	Title
001890 (2004-05)		InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer
001891 (2004-05)		Growth of InGaN self-assembled quantum dots and their application to photodiodes
001914 (2004-02-23)		Observation of spontaneous ordering in the optoelectronic material GaInNP
001997 (2004)		InGaN/GaN multi-quantum dot light-emitting diodes
001A94 (2003-06-02)		Observation of self-organized superlattice in AlGaInAsSb pentanary alloys
001B99 (2003)		Growth of nanoscale InGaN self-assembled quantum dots
001E56 (2001-04-01)		Temperature-dependent electroluminescence in poly [2-methoxy-5(2′-ethylhexyloxy)-p-phenylenevinylene] light-emitting diode
002149 (1999-12-15)		GaInAsSb/InP heterojunction band offset: Measurement by absorption spectroscopy
002179 (1999-07-12)		Measurement of AlInAsSb/GaInAsSb heterojunction band offset by photoluminescence spectroscopy
002186 (1999-06-15)		1/f noise measurements on indium antimonide metal-oxide-semiconductor field-effect transistors
002187 (1999-06-07)		High conduction-band offset of AlInAsSb/InGaAs multiple quantum wells grown by metalorganic vapor phase epitaxy
002200 (1999-02-01)		Determination of the valence-band offset for GaInAsSb/InP heterostructure
002299 (1998-11)		BCl3/Ar reactive ion etching for gate recessing of GaInP/InGaAs/GaAs pseudomorphic high electron mobility transistors
002311 (1998-07)		Reactive ion etching for AlGalnP/GaInP laser structures
002312 (1998-06-22)		Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN
002455 (1997-06-01)		Optical and structural characterization of InAs/GaSb superlattices
002458 (1997-05-15)		Characteristics of InxGa1-xAs/GaAs pseudomorphic modulation doped field effect transistor
002471 (1997-01-15)		Origins of 1/f noise in indium antimonide photodiodes
002648 (1995-08-01)		Observation of quantum confined Stark effect in InxGa1-xAs/GaAs single-quantum well by photoreflectance spectroscopy
002659 (1995-06-15)		Study on symmetry forbidden transitions in an InxGa1-xAs/GaAs single quantum well by temperature dependence
002677 (1995-03)		High quality ZnO thin films on InP substrates prepared by radio frequency magnetron sputtering. II. Surface acoustic wave device fabrication

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List of associated KwdEn.i

Nombre de documents	Descripteur
27	Experimental study
17	III-V semiconductors
15	Indium compounds
10	Gallium arsenides
8	Gallium compounds
8	Photoluminescence
5	Aluminium compounds
4	Indium phosphides
4	Infrared spectra
4	Interface states
4	MOCVD
4	Semiconductor growth
4	Semiconductor quantum wells
3	1/f noise
3	CVD
3	Indium arsenides
3	Light emitting diodes
3	Nanostructured materials
3	Self-assembly
3	Semiconductor superlattices
3	Wide band gap semiconductors
2	Acoustic surface waves
2	Chemical vapor deposition
2	Conduction bands
2	Crystal growth from vapors
2	Electroluminescence
2	Fourier transform spectra
2	Heterojunction transistor
2	High electron mobility transistors
2	High-frequency discharges
2	Indium Phosphides
2	Integrated optics
2	Photodiodes
2	Photoreflectance
2	Quantum wells
2	Reflection spectroscopy
2	Semiconductor device models
2	Semiconductor device noise
2	Semiconductor epitaxial layers
2	Sputter etching
2	Sputtered materials
2	Surface topography
2	TEM
2	Ternary compounds
2	Theoretical study
2	Thin films
2	Transmission electron microscopy
2	VPE
2	Valence bands
2	XRD
2	Zinc oxides
1	AES
1	Acousto-optical effects
1	Aluminium arsenides
1	Aluminium phosphides
1	Annealing
1	Argon
1	Atomic force microscopy
1	Auger effect
1	Binary compounds
1	Bipolar transistor
1	Boron chlorides
1	CV characteristic
1	Characterization
1	Chemical bonds
1	Chemical composition
1	Chemical interdiffusion
1	Chlorinated aliphatic hydrocarbons
1	Chlorine
1	Circuit design
1	Continuity equations
1	Cryogenic electronics
1	Crystal growth
1	Crystal structure
1	Current density
1	Dark conductivity
1	Depth profiles
1	Doping profiles
1	Electric conductivity
1	Electric current
1	Electric noise measurement
1	Ellipsometry
1	Energy gap
1	Epitaxy
1	Etching
1	Exciton
1	Excitons
1	Fabrication property relation
1	Fermi level
1	Franz-Keldysh effect
1	Gallium Indium Antimonides Mixed
1	Gallium Indium Arsenides Mixed
1	Gallium nitride
1	Gallium nitrides
1	Gallium phosphides
1	Heteroepitaxy
1	Heterojunctions
1	Hole density
1	Impurity absorption spectra
1	Indium Gallium Arsenides Mixed

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