Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Y. H. Chen »
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Y. Guo < Y. H. Chen < Y. H. Huo  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 41.
[0-20] [0 - 20][0 - 41][20-40]
Ident.Authors (with country if any)Title
000149 (2013) Photoluminescence properties of porous InP filled with ferroelectric polymers
000351 (2012) Wurtzite to zincblende transition of InN films on (011) SrTiO3 by decreasing trimethylindium flows
000381 (2012) Tailoring the in-plane epitaxial relationship of InN films on (1 11)SrTiO3 substrates by substrate pretreatment
000A05 (2010) Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density
000B16 (2010) Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density
000B24 (2010) InN layers grown by MOCVD on SrTi03 substrates
000B75 (2010) Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films
000C08 (2010) Different growth mechanisms of bimodal InAs/GaAs QDs
000C34 (2010) Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density
000D91 (2009) Observation of the surface circular photogalvanic effect in InN films
001094 (2008) Mn-including InAs quantum dots fabricated by Mn implantation
001211 (2008) Circular photogalvanic effect at inter-band excitation in InN
001444 (2007) Effect of inter-level relaxation and cavity length on double-state lasing performance of quantum dot lasers
001484 (2007) Anomalous photoluminescence of InAs quantum dots implanted by Mn ions
001522 (2006) Temperature dependence of surface quantum dots grown under frequent growth interruption
001539 (2006) Study of nucleation positions of InAs islands on stripe-patterned GaAs (100) substrate
001579 (2006) Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness
001598 (2006) Kinetic Monte Carlo simulation of spatially ordered growth of quantum dots on patterned substrate
001687 (2006) Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots
001791 (2005) Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness
001832 (2005) Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP (001)

List of associated KwdEn.i

Nombre de
documents
Descripteur
30Indium arsenides
25Gallium arsenides
23Photoluminescence
20III-V semiconductors
19Experimental study
17Molecular beam epitaxy
16Quantum dots
9Aluminium arsenides
9Temperature dependence
8Thin films
7Growth mechanism
7Semiconductor materials
7Temperature effects
6Atomic force microscopy
6Binary compounds
6Crystal growth from vapors
6III-V compound
6Indium nitride
6Nanostructured materials
6Ternary compounds
5Self-assembly
5Spectral line shift
5Thickness
5Transmission electron microscopy
4Bipolar transistors
4Energy gap
4Epitaxial layers
4Indium compounds
4MOCVD
4Nanostructures
4Quantum wells
4XRD
3Buffer layer
3Excitons
3Growth rate
3Heterojunctions
3High density
3Indium phosphides
3Interband transitions
3Interdiffusion
3Interface states
3Microstructure
3Modulation spectroscopy
3Optical properties
3RHEED
3Self organization
3Self-assembled layers
3Semiconductor quantum wells
3Size effect
3Wetting
2Absorption edge
2Annealing
2Defects
2Dimension spectrum
2Doping
2Electronic density of states
2Epitaxy
2Film growth
2Franz-Keldysh effect
2Graded band gaps
2Heteroepitaxy
2Heterostructures
2Inorganic compounds
2Ion implantation
2Island structure
2Manganese additions
2Modulation
2Monolayers
2Morphology
2Photoconductivity
2Photoreflectance
2Quantum dot lasers
2Quantum system
2Quantum wires
2Rapid thermal annealing
2Rate equation
2Reflection spectroscopy
2Reflection spectrum
2Segregation
2Self assembly
2Stress effects
2Strontium titanates
2Surface morphology
2Ultrathin films
1Absorption spectroscopy
1Accumulation layers
1Adatoms
1Anomaly
1Arsenides
1Atom migration
1Atomic arrangement
1Blende structure
1Blue shift
1Carrier density
1Cesium
1Charge carrier trapping
1Charge density
1Chemical composition
1Cleavage
1Conduction bands

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