Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Y. G. Zhang »
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Y. G. Xiao < Y. G. Zhang < Y. G. Zhou  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 17.
Ident.Authors (with country if any)Title
000078 (2013) The effects of injector doping densities on lasing properties of InP-based quantum cascade lasers at 4.3 μm
000274 (2013) Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectors
000330 (2013) Absorption coefficients of In0.8Ga0.2As at room temperature and 77 K
000619 (2012) Anomalous spin-orbit coupling in high-density two-dimensional electron gas confined in InGaAs/InAlAs quantum well
000730 (2011) Quantum dot lasers grown by gas source molecular-beam epitaxy
000D67 (2009) Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE
000D81 (2009) Performance of gas source MBE-grown wavelength-extended InGaAs photodetectors with different buffer structures
000D84 (2009) Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1-2.4 μm range
001368 (2007) Key issues associated with low threshold current density for InP-based quantum cascade lasers
001784 (2005) Low threshold distribution feedback quantum cascade lasers at 7.6μm grown by gas source molecular beam epitaxy
001810 (2005) Heat management of MBE-grown antimonide lasers
001842 (2005) Continuous-wave operation quantum cascade lasers at 7.95 μm
001B30 (2003) The effects of (NH4)2S passivation treatments on the dark current-voltage characteristics of InGaAsSb PIN detectors
001F09 (2001) Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasers
001F27 (2001) MBE grown 2.0 μm InGaAsSb/AlGaAsSb MQW ridge waveguide laser diodes
001F66 (2001) Characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE
002613 (1996) Improved performance of InAlAs-InGaAs-InP MSM photodetectors with graded superlattice structure grown by gas source MBE

List of associated KwdEn.i

Nombre de
documents
Descripteur
14Molecular beam epitaxy
11Gallium arsenides
11Indium arsenides
10GSMBE method
8III-V semiconductors
6Semiconductor lasers
5Experimental study
5XRD
4Crystal growth from vapors
4Current density
4Doping
4Growth mechanism
4III-V compound
4Quantum cascade laser
3Aluminium arsenides
3Gallium antimonides
3Indium antimonides
3Indium phosphides
3Nanostructured materials
3Output power
3Photodetectors
3Photoluminescence
3Quaternary compounds
3Ternary compounds
3Threshold current
2Aluminium antimonides
2Buffer layer
2Continuous wave
2Dark current
2Gallium phosphides
2Heterojunctions
2Indium phosphide
2Infrared laser
2Laser diodes
2Multiple quantum well
2Optimization
2Quantum wells
2Semiconductor materials
2Temperature dependence
2Temperature distribution
2Thin films
2Two-dimensional electron gas
1Abrupt heterojunction
1Absorption coefficients
1Aluminium Indium Arsenides Mixed
1Ambient temperature
1Application
1Arsenic Antimonides
1Arsenides
1Atomic force microscopy
1Binary compound
1Binary compounds
1Carrier concentration
1Crystal growth
1Crystal structure
1Dark current density
1Defect density
1Detectors
1Digital simulation
1Electric breakdown
1Electrical conductivity
1Emission spectra
1Energy gap
1Energy levels
1Epitaxial growth
1Epitaxial layers
1Experiments
1Feedback
1Finite element method
1Fourier-transformed infrared spectrometry
1Gallium Indium Arsenides Mixed
1Gas source molecular beam epitaxy
1Graded superlattice
1Heat transfer
1Holography
1Homojunctions
1IV characteristic
1Illumination
1Indium
1Indium compounds
1Infrared detector
1Injection laser
1Lamellar structure
1Layer thickness
1Leakage currents
1Light absorption
1Magnetoresistance
1Metal semiconductor metal photodetectors
1Microelectronic fabrication
1Monolayers
1Multilayers
1Non linear effect
1Optical properties
1Optical spectrum
1Optical waveguides
1Oscillations
1Passivation
1Performance evaluation
1Phonons
1Phosphides

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