Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Y. F. Chen »
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Y. F. Chan < Y. F. Chen < Y. F. Dong  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 34.
[0-20] [0 - 20][0 - 34][20-33][20-40]
Ident.Authors (with country if any)Title
001331 (2007) Photoluminescence dynamics and structural investigation of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition
001897 (2004-04-05) Observation of coherent interfacial optical phonons in GaInP/GaAs/GaInP single quantum wells
001910 (2004-03-01) Mechanism of enhanced luminescence in InxAlyGa1-x-yN quaternary epilayers
001A74 (2003-09-01) Piezoelectric, electro-optical, and photoelastic effects in InxGa1-xN/GaN multiple quantum wells
001B05 (2003-03-24) Persistent photoconductivity in InxAlyGa1-x-yN quaternary alloys
001C68 (2002-08-15) Degree of ordering in Al0.5In0.5P by Raman scattering
001C81 (2002-05-13) Photoluminescence study of hydrogen passivation in InAs1-xNx/InGaAs single-quantum well on InP
001C97 (2002-02-25) Mechanism of enhanced luminescence in InxAlyGa1-x-yN quaternary alloys
001D02 (2002-02-04) Nitrogen-induced enhancement of the electron effective mass in InNxAs1-x
001E71 (2001-01-15) Persistent photoconductivity in InGaN/GaN multiquantum wells
001F95 (2000-10-15) Mechanism for photoluminescence in an InyAs1-yN/InxGa1-xAs single quantum well
002010 (2000-06-19) Mechanism of luminescence in InGaN/GaN multiple quantum wells
002038 (2000-02-01) Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence
002157 (1999-11-15) Positive and negative persistent photoconductivity in a two-side-doped In0.53Ga0.47As/In0.52Al0.48As quantum well
002159 (1999-11-08) Persistent photoconductivity in InGaP/GaAs heterostructures
002167 (1999-09-15) Positive and negative persistent photoconductivities in semimetallic AlxGa1-xSb/InAs quantum wells
002194 (1999-03-08) The optical and electrical studies of hydrogen passivation in GaInP/GaAs heterostructures
002203 (1999-01-15) Persistent photoconductivity in semimetallic AlxGa1-xSb/InAs quantum wells
002298 (1998-11-01) Photoconductivity in self-organized InAs quantum dots
002309 (1998-08-01) Photoreflectance spectroscopy of strained-layer (111)B InGaAs/GaAs quantum well diodes
002335 (1998-03-09) Characterization of piezoelectric (111)B InGaAs/GaAs p-i-n quantum well structures using photoreflectance spectroscopy

List of associated KwdEn.i

Nombre de
documents
Descripteur
32Experimental study
23III-V semiconductors
23Indium compounds
19Gallium arsenides
16Photoluminescence
13Semiconductor quantum wells
11Gallium compounds
9Photoconductivity
8Aluminium compounds
8Interface states
7Effective mass
7Indium arsenides
6Raman spectra
6Wide band gap semiconductors
5Semiconductor epitaxial layers
4Epitaxial layers
4Hydrogenation
3Aluminium arsenides
3Band structure
3Electron cyclotron-resonance
3Energy gap
3Excitons
3Passivation
3Phonon spectra
3Piezoelectric semiconductors
3Semiconductor heterojunctions
2Arsenic compounds
2Carrier density
2Cyclotron resonance
2Deep energy levels
2Defect states
2Disordered systems
2Electron-hole recombination
2Fermi level
2Heterojunctions
2Heterostructures
2Hole traps
2Indium phosphides
2Landau levels
2MOCVD coatings
2Photoreflectance
2Quantum wells
2Red shift
2Semiconductor quantum dots
2Semiconductor superlattices
2Spectral shift
2Stoichiometry
2Ternary alloys
2Theoretical study
2XRD
1Activation energy
1Annealing
1Bipolar transistors
1CVD
1Capacitance
1Cathodoluminescence
1Chemical composition
1Chemical interdiffusion
1Conduction bands
1Crystal defects
1Crystal structure
1Dislocation structure
1Dislocations
1Doped materials
1Durability
1Electro-optical effects
1Electron gas
1Electroreflectance
1Energy-level splitting
1Hall effect
1High resolution
1Hydrogen
1Infrared spectra
1Interface phonons
1Interface structure
1Landé factor
1Lattice parameters
1Lattice vibrations
1Level crossing
1Light emitting diode
1Line shape
1Line widths
1Localized states
1Long-range order
1Low-power electronics
1MOCVD
1Microelectronic fabrication
1Migration length
1Multiple quantum well
1Nanostructured materials
1Nonradiative transitions
1ODMR
1Optical characteristic
1Optical harmonic generation
1Optical measurement
1Optical phonons
1Optoelectronic device
1Oscillations
1Phonons
1Photochemical reactions

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