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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Y. D. Zheng »
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Y. D. Ye < Y. D. Zheng < Y. Dai  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 18.
Ident.Authors (with country if any)Title
000165 (2013) Obvious improvement of light extraction obtained by anodic aluminum oxide coverage on GaN surface
000520 (2012) Growth and characterization of InGaN nanodots hybrid with InGaN/GaN quantum wells
000864 (2011) Exploring optimal UV emission windows for AlGaN and AlInN alloys grown on different templates
000B75 (2010) Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films
000D91 (2009) Observation of the surface circular photogalvanic effect in InN films
001211 (2008) Circular photogalvanic effect at inter-band excitation in InN
001265 (2007) The high mobility InN film grown by MOCVD with GaN buffer layer
001370 (2007) Initial stages of the cubic-InN growth with the technique of the pre-deposition of indium
001501 (2006) Two-dimensional electron gas densities in AlGaN/AlN/GaN heterostructures
001513 (2006) Theoretical study of improved two-dimensional electron gas density in AlGaN/GaN/AlGaN double heterostructure
001703 (2005) Thermal annealing of InN films grown by metal-organic chemical vapor deposition
001749 (2005) Quantum and transport scattering times in modulation-doped AlxGa1-xN/GaN single quantum wells
001865 (2005) A novel InxGa1-xN/InN heterostructure field-effect transistor with extremely high two-dimensional electron-gas sheet density
001915 (2004-02-23) Comment on Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures [Appl. Phys. Lett. 80, 2684 (2002)]
001B37 (2003) Subbands transport of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
001B71 (2003) Ohmic contact and interfacial reaction of Ti/Al/Pt/Au metallic multi-layers on n-AlxGa1-xN/GaN heterostructures
001C20 (2003) Effect of surface treatments on Schottky contact on n-AlxGa1-xN/GaN heterostructures
001C26 (2003) Designing two-dimensional electron gas in AlGaN/InGaN/GaN heterostructures through the incorporated InGaN layer

List of associated KwdEn.i

Nombre de
documents		Descripteur
10Indium nitrides
8Gallium nitrides
7Aluminium nitrides
7Semiconductor materials
6Binary compounds
6Ternary compounds
5Heterostructures
5III-V semiconductors
5Indium nitride
5Inorganic compounds
5Photoluminescence
4Experimental study
4Poisson equation
4Two-dimensional electron gas
3Carrier density
3Interband transitions
3MOCVD
3Modulation doping
3Quantum wells
3Schroedinger equation
3Self consistency
3XRD
2Aluminium
2Annealing
2Atomic force microscopy
2Band structure
2Barrier layer
2Buffer layer
2Electronic properties
2Energy gap
2Gallium nitride
2Gold
2III-V compound
2IV characteristic
2Indium compounds
2Interfacial layer
2Magnetoresistance
2Platinum
2Scanning electron microscopy
2Strained layer
2Subband
2Thin films
2Transport processes
1Absorption edge
1Absorption spectra
1Accumulation layers
1Aluminium Gallium Nitrides Mixed
1Aluminium Indium Nitrides Mixed
1Aluminium compounds
1Ambient temperature
1Ammonia
1Anodic oxide
1Anodizing
1Barrier height
1CVD
1Chemical composition
1Chemical treatment
1Comparative study
1Compressive stress
1Computing method
1Conduction band
1Conduction bands
1Confinement
1Contact resistance
1Coverage rate
1Critical phenomena
1Crystal growth from vapors
1Crystal nucleation
1Crystal structure
1Cubic lattices
1Distribution functions
1Doping profile
1Electrical characteristic
1Electrical properties
1Electron charge distribution
1Electron distribution
1Electron gas model
1Electron interaction
1Electron-defect interactions
1Electronic structure
1Excitons
1Experimental result
1Field effect transistor
1Field effect transistors
1Films
1Fluctuations
1Gallium Nitrides
1Gallium compound
1Gallium compounds
1Hall mobility
1Helicity
1Incidence angle
1Indium Nitrides
1Indium compound
1Infrared spectra
1Integrated intensity
1Interface reaction
1Lamellar structure
1Laser radiation
1Line widths

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