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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « XIAOMIN REN »
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List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000243 (2013) Growth of InAs quantum dots on Si-based GaAs nanowires by controlling the surface adatom diffusion
000367 (2012) The saturation density property of (B)InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition
000525 (2012) Formation Mechanism and Optical Properties of InAs Quantum Dots on the Surface of GaAs Nanowires
000528 (2012) First-principle study of the electronic and optical properties of BInGaAs quaternary alloy lattice-matched to GaAs
000792 (2011) Long Wavelength Multiple Resonant Cavities RCE Photodetectors on GaAs Substrates
000842 (2011) Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition
000E32 (2009) InP nanowires with various morphologies formed by Au-assisted metal-organic chemical vapor deposition
000F26 (2009) Design and Fabrication of Multichannel Tunable Photodetector Array
001198 (2008) Design and Fabrication of 2×2 InP/InGaAsP Optical Switch
001226 (2008) Analysis and Simulation of Process Parameters for Epitaxy of InP-based Compound Semiconductor Materials
001457 (2007) Design and Fabrication of a Novel Monothically Integrated Dual-Wavelength Tunable Photodetector
001500 (2006) Wavelength-selective photodetectors operating at long wavelength
001596 (2006) Long wavelength integrated optical demultiplexing and receiving device based on one-mirror-inclined three-mirror cavity structure
001790 (2005) Influence of the low temperature buffer layer on InP epitaxial growth on GaAs substrates
001808 (2005) High-performance InP-based resonant cavity enhanced photodetector based on InP/air-gap Bragg reflectors
001A44 (2004) Analysis of the structures and characteristics for an InP-based micromechanical tunable filter

List of associated KwdEn.i

Nombre de
documents		Descripteur
11III-V semiconductors
7Binary compound
7Photodetector
6Quantum yield
5III-V compound
5Indium Phosphides
5Indium phosphide
5MOCVD
5Nanostructured materials
4Indium arsenides
4Line width
4Nanowires
4Photoluminescence
4Quantum dots
3Adatoms
3Binary compounds
3Blende structure
3Buffer layer
3Catalysts
3Gallium arsenides
3Growth mechanism
3Optoelectronic device
2Aluminium arsenides
2Cavity resonator
2Diffusion
2Epitaxy
2Fabry Perot resonator
2Gold
2High speed
2Indium phosphides
2Nanomaterial synthesis
2Optical filter
2Optimization
2Optoelectronic devices
2Wavelength division multiplexing
2Zinc
1Absorption coefficients
1Active component
1Adsorption
1Air gap
1Ambient temperature
1Boron
1Boron Gallium Indium Arsenides Mixed
1Bragg reflection
1CVD
1Capacitive transducer
1Cavity
1Crosstalk
1Dark current
1Demultiplexing
1Density functional method
1Dielectric function
1Electromagnetic wave propagation
1Electronic density of states
1Electrostatic machine
1Energy gap
1Epitaxial layers
1Experimental study
1Fabry Pérot interferometer
1Film growth
1Finite element method
1Flatness
1Formation mechanism
1Free carrier
1Frequency response
1Gallium Arsenides
1Gallium Phosphides
1Growth rate
1Heterostructures
1High performance
1Indium Arsenides
1Infrared detectors
1Injection current
1Inorganic compounds
1Line widths
1Low temperature
1Mach-Zehnder interferometers
1Measurement sensor
1Microelectromechanical device
1Microelectronic fabrication
1Microstructure
1Mirrors
1Mismatch lattice
1Modelling
1Monolithic integrated circuit
1Multiple channel
1Multistep method
1Nanostructures
1Nanowire device
1Near infrared radiation
1Optical communication
1Optical fiber
1Optical interconnections
1Optical properties
1Optical switches
1Optical telecommunication
1Performance evaluation
1Photovoltaic cell
1Quaternary alloys
1Quaternary compounds

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