Auteurs
Analysis
Chine
Racine
Analysis
Chine
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « XIANGLIN LIU »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
XIANGLIAN SONG < XIANGLIN LIU < XIANGLING JI  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 17.
Ident.Authors (with country if any)Title
000059 (2013) Two dimensional electron gas mobility limited by scattering of quantum dots with indium composition transition region in quantum wells
000518 (2012) Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth
000785 (2011) MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers
000C62 (2009) Well-Aligned Zn-Doped InN Nanorods Grown by Metal-Organic Chemical Vapor Deposition and the Dopant Distribution
001183 (2008) Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)
001674 (2006) Crack control in GaN grown on silicon (111) using in doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition
001952 (2004) Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition
001A29 (2004) Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure
001A34 (2004) Crack-free InAlGaN quaternary alloy films grown on Si(1 1 1) substrate by metalorganic chemical vapor deposition
001B43 (2003) Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method
001B46 (2003) Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0 0 0 1) sapphire substrate
001D18 (2002) The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method
001D19 (2002) The mechanism of blueshift in excitation-intensity-dependent photoluminescence spectrum of nitride multiple quantum wells
001D37 (2002) Statistical investigation on morphology development of gallium nitride in initial growth stage
001E10 (2002) A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition
001F32 (2001) Indium doping effect on GaN in the initial growth stage
002095 (2000) In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE

List of associated KwdEn.i

Nombre de
documents		Descripteur
12Gallium nitrides
11Experimental study
10III-V semiconductors
9Crystal growth from vapors
9MOCVD
9Photoluminescence
8Indium nitrides
7Thin films
6Low pressure
6Quantum dots
5CVD
5Characterization
5Indium additions
5XRD
4Aluminium nitrides
4Buffer layer
4Crystal perfection
4Growth mechanism
4Low temperature
4MOVPE method
4Morphology
4Passivation
4VPE
3Binary compounds
3Crystal doping
3Gallium nitride
3III-V compound
3Indium nitride
3Multilayers
3Nanostructured materials
3Nanostructures
3Surface morphology
3Surfaces
3Ternary compounds
2Atomic force microscopy
2Carrier mobility
2Crystal structure
2Doping
2Interlayers
2Monocrystals
2Roughness
2Semiconductor materials
2Spectral line shift
2Two-dimensional electron gas
1Activation energy
1Anisotropy
1Annealing
1Band structure
1Blue shift
1Carrier density
1Charge carriers
1Charge transfer
1Compressive stress
1Crystal morphology
1Crystal nucleation
1Crystallinity
1Crystallography
1Diffusion
1Digital simulation
1Dimension spectrum
1Dislocations
1Dispersive spectrometry
1Doped materials
1Electron microscopy
1Electron mobility
1Electron-defect interactions
1Electronic properties
1Energy barrier
1Energy dispersive spectroscopy
1Energy gap
1Epitaxial layers
1Epitaxy
1Excitation intensity
1Excitons
1Heterojunctions
1Heterostructures
1High density
1IV characteristic
1Impurity effect
1In situ
1Indium
1Interfaces
1Interfacial layer
1Interrupts
1Lateral growth
1Lattice parameters
1Line widths
1Localized exciton
1Localized states
1Multiple quantum well
1Multistep method
1Nanomaterial synthesis
1Nanometer scale
1Nanopatterning
1Nanorod
1Optical materials
1Optical microscopy
1Optical properties
1Optoelectronic devices
1Poisson equation

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i -k "XIANGLIN LIU" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
                -Sk "XIANGLIN LIU" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    XIANGLIN LIU
}}
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024