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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « X. Ma »
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X. M. Zhao < X. Ma < X. N. Kang  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 6.
Ident.Authors (with country if any)Title
002087 (2000) Native oxided AlAs current blocking layer for AlGaInP high brightness light emitting diodes
002350 (1998) The study of single mode 650nm AlGaInP quantum well laser diodes for DVD
002398 (1998) High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD
002400 (1998) High performance 1.55μm InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method
002405 (1998) Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs
002474 (1997) [μ-(1,4-dibenzylpiperazine)-N:N']bis(trimethylindium) dibenzene solvate

List of associated KwdEn.i

Nombre de
documents		Descripteur
4Indium Phosphides
4MOVPE method
4Quaternary compounds
4Semiconductor lasers
3Gallium Phosphides
3Injection laser
2Aluminium Phosphides
2Experimental study
2Gallium Arsenides
2Quantum wells
2Strained quantum well
1Aging test
1Aluminium arsenides
1Aluminium phosphide
1Binary compounds
1Blocking layer
1Brightness
1Crystal structure
1Dinuclear complex
1Electrical properties
1Electroluminescent device
1Experimental result
1Gallium phosphide
1Indium Arsenides
1Indium complexes
1Indium phosphide
1Injection current
1Interfacial layer
1Light emitting diode
1Low pressure
1Luminous intensity
1Measurement method
1Molecular structure
1Mu complex
1Nitrogen heterocycle
1Optical properties
1Organic ligand
1Oxide layer
1Performance characteristic
1Performance evaluation
1Quaternary compound
1Reliability
1Room temperature
1Sandwich structure
1Single mode laser
1Six membered ring
1Solvate
1Strained layer
1Ternary compounds
1Waveform
1XRD

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