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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « X. M. Ding »
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X. M. Chen < X. M. Ding < X. M. Fan  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
001307 (2007) Small-molecular organic solar cells with C60/A1 composite anode
001355 (2007) Modification of the organic/La0.7Sr0.3MnO3 interface by in situ gas treatment
001833 (2005) Effect of electric fields on photoluminescence of 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran
001895 (2004-04-12) Electron blocking and hole injection: The role of N,N′-Bis(naphthalen-1-y)-N,N′-bis(phenyl)benzidine in organic light-emitting devices
001947 (2004) Study of photoluminescence and absorption in phase-separation InGaN films
001B89 (2003) InGaN/GaN MQW high brightness LED grown by MOCVD
002020 (2000-05-08) Modification of the hole injection barrier in organic light-emitting devices studied by ultraviolet photoelectron spectroscopy
002060 (2000) Synchrotron radiation photoelectron spectroscopy study of ITO surface
002073 (2000) Real-time observation of temperature rise and thermal breakdown processes in organic LEDs using an IR imaging and analysis system
002202 (1999-01-25) Enhanced hole injection in a bilayer vacuum-deposited organic light-emitting device using a p-type doped silicon anode
002406 (1998) Growth and doping characteristics of InGaN films grown by low pressure MOCVD
002423 (1998) Auger electron spectroscopy of neutralized (NH4)2S-passivated InP(100) surfaces

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Experimental study
4Photoluminescence
3Semiconductor materials
3Surface treatments
2Electroluminescence
2Gallium nitrides
2Indium nitrides
2Light emitting diodes
2MOCVD
2Optoelectronic device
2Organic light emitting diodes
2Synchrotron radiation
2Ternary compounds
2Thin films
2Work functions
1AES
1Absorption spectra
1Aluminium
1Aluminium complex
1Aluminium compounds
1Aluminum compounds
1Amines
1Annealing
1Anode
1Barrier height
1Binary compound
1Cathodoluminescence
1Chemical composition
1Composite material
1Composition effect
1Conversion rate
1Copper complex
1Current density
1Decomposition
1Deep level
1Doped materials
1Doping
1Durability
1Electric field effects
1Electromigration
1Electron mobility
1Electron traps
1Electronic structure
1Excitation spectrum
1Excitons
1Experiments
1Fabrication property relation
1Fullerenes
1Gallium nitride
1Heterojunctions
1Hole mobility
1Hydrogen
1Illumination
1In situ
1Inclusions
1Indium compounds
1Indium nitride
1Indium oxide
1Indium oxides
1Indium phosphides
1Indium tin oxide
1Interface states
1Interfacial layer
1Joule heating
1Lanthanum Manganites
1Light emitting device
1Light emitting devices
1Light emitting diode
1Lithium compounds
1MOVPE method
1Metallophthalocyanine
1Microelectronic fabrication
1Microstructure
1Multiple quantum well
1Organic compounds
1Organic light emitting diodes (OLED)
1Organic semiconductors
1Organometallics
1Oxygen
1Passivation
1Performance evaluation
1Phase separation
1Photoelectron spectroscopy
1Photoemission
1Pyrans
1Quantum dot
1Quantum dots
1Quaternary compounds
1Quinoline derivatives
1Radiation quenching
1Radiative recombination
1Rare earth compounds
1Reliability
1Semiconducting indium compounds
1Silicon additions
1Size effect
1Solar cell
1Spectral line shift
1Spin injection
1Stokes shift

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
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