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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « X. Li »
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X. L. Zhu < X. Li < X. Liang  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
000A39 (2010) Strained InGaAs/GaAs Quantum-Well Laser Emitting at 1054 nm
000B59 (2010) Experimental and simulation analysis of the dye sensitized solar cell/Cu(In,Ga)Se2 solar cell tandem structure
001005 (2008) The defect density of a SiNx /In0.53Ga0.47As interface passivated using (NH4)2Sx
001220 (2008) Blue top-emitting organic light-emitting devices using a 2,9-dimethyl-4,7-diphenyl-1.10-phenanthroline outcoupling layer
001802 (2005) Improved analytical method for determination of small-signal equivalent-circuit model parameters for InP/InGaAs HBTs
002537 (1997) A comparative study of the thermal stability of the (103) surface of group-III-metal/group-IV-semiconductor systems
002570 (1996-05-01) Photoluminescence of GaInP under high pressure
002572 (1996-03-18) Ordering along <111> and <100> directions in GaInP demonstrated by photoluminescence under hydrostatic pressure

List of associated KwdEn.i

Nombre de
documents		Descripteur
4Experimental study
3Gallium arsenides
3Indium arsenides
2Annealing
2Equivalent circuit
2Semiconductor materials
1Adsorbed state
1Aluminium
1Amorphous hydrogenated material
1Analytical method
1Antireflection coatings
1Binary compound
1Blue light
1Buffer layer
1CV characteristic
1Capacitance
1Cathode
1Cavity
1Chemical bonds
1Chromaticity
1Circuit parameter
1Closed form equation
1Conversion rate
1Copper selenides
1Defect density
1Defect states
1Dye-sensitized solar cell
1Electronic density of states
1Electronic structure
1Experimental result
1Faceting
1Frequency characteristic
1GHz range
1Gallium
1Gallium selenides
1Germanium
1Heterojunction bipolar transistors
1IV characteristic
1Indium
1Indium oxide
1Indium phosphide
1Indium selenides
1Interfaces
1Light emitting device
1MOCVD
1Network topology
1Open circuit voltage
1Optoelectronic device
1Organic electronics
1Organic light emitting diodes
1PECVD
1Parameter extraction
1Passivation
1Performance evaluation
1Phenanthrolines
1Quantum well lasers
1Quaternary compound
1Reflectance
1Samarium
1Silicon
1Silicon nitride
1Silver
1Small signal
1Solar cell
1Strained layer
1Sulfidation
1Surface properties
1Surface structure
1Tandem solar cell
1Tensile stress
1Ternary compound
1Theoretical model
1Thermal stability
1Threshold current
1Tin addition
1Transmittance
1Viewing angle
1Waveform
1X-ray photoelectron spectra
1XRD
1s parameter

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
                -Sk "X. Li" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd

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