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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « X. L. Liu »
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X. L. Lei < X. L. Liu < X. L. Ma  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
000351 (2012) Wurtzite to zincblende transition of InN films on (011) SrTiO3 by decreasing trimethylindium flows
000381 (2012) Tailoring the in-plane epitaxial relationship of InN films on (1 11)SrTiO3 substrates by substrate pretreatment
000997 (2010) The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy
000B24 (2010) InN layers grown by MOCVD on SrTi03 substrates
000C37 (2010) A study of indium incorporation in In-rich InGaN grown by MOVPE
001767 (2005) Origin of the blueshift in the infrared absorbance of intersubband transitions in AlxGa1-x N/GaN multiple quantum wells
001782 (2005) Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates
001B84 (2003) Localized exciton dynamics in AlInGaN alloy
001B98 (2003) Growth temperature effect on the optical and material properties of AlxInxGa1-x-yN epilayers grown by MOCVD

List of associated KwdEn.i

Nombre de
documents		Descripteur
6MOCVD
5Photoluminescence
5Semiconductor materials
4Epitaxy
4Gallium nitrides
4Indium nitride
4Indium nitrides
3Aluminium nitrides
3Inorganic compounds
3Spectral line shift
3Ternary compounds
2CVD
2Experimental study
2Film growth
2III-V semiconductors
2Localized exciton
2Quantum dots
2Strontium titanates
2Temperature effects
2Thin films
2Wurtzite structure
1Absorption edge
1Absorption spectra
1Activation energy
1Active layer
1Adatoms
1Atomic arrangement
1Atomic force microscopy
1BCC lattices
1Band offset
1Blende structure
1Buffer layer
1Carrier mobility
1Charge carrier recombination
1Chemical composition
1Chromium
1Coulomb interaction
1Crystal defects
1Crystal growth from vapors
1Density
1Depolarization
1Doping
1Electron-electron interactions
1Electronic density of states
1Energy levels
1Epitaxial layers
1Excitons
1Fabrication property relation
1Fluctuations
1Gallium nitride
1Ground states
1Growth mechanism
1Heterostructures
1III-V compound
1Indium
1Indium oxide
1Infrared spectra
1Interband transitions
1Light emitting diodes
1Luminescence
1MOVPE method
1Multilayers
1Multiple quantum well
1Operating mode
1Orientation relation
1Passivation
1Phase transformations
1Pretreatment
1Quantum wells
1Quaternary compounds
1Radiative lifetimes
1Self consistency
1Solid solutions
1Spontaneous polarization
1Subband
1Surface barrier
1Surface reconstruction
1Temperature dependence
1Time resolution
1Time resolved spectra
1Transition element compounds
1Valence bands
1X-ray photoelectron spectra
1XRD
1Zinc oxide

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