Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « X. D. Wang »
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X. D. Pu < X. D. Wang < X. D. Yang  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
000763 (2011) Optically induced current oscillation in a modulation-doped field-effect transistor embedded with InAs quantum dots
000F30 (2009) Dark current simulation of InP/In0.53Ga0.47As/InP p-i-n photodiode
001358 (2007) Metamorphic growth of 1.25-1.29 μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy
001359 (2007) Metamorphic InGaAs quantum wells for light emission at 1.3-1.6 μm
001F59 (2001) Effect of InxGa1-xAs (0≤x≤0.4) capping layer on self-assembled 1.3 μm wavelength InAs/GaAs quantum islands
002035 (2000-02-15) Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots
002109 (2000) Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy
002116 (2000) Effects of interdiffusion on the luminescence of InAs/GaAs quantum dots covered by InGaAs overgrowth layer
002125 (2000) Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots
002146 (2000) 1.35 μm photoluminescence from In0.5Ga0.5As/GaAs islands grown by molecular beam epitaxy via cycled (InAs)1/(GaAs)1 monolayer deposition

List of associated KwdEn.i

Nombre de
documents
Descripteur
9Gallium arsenides
8Indium arsenides
7III-V semiconductors
6Experimental study
6Photoluminescence
5Quantum dots
4Crystal growth from vapors
4Molecular beam epitaxy
3Epitaxial layers
3Growth mechanism
3Semiconductor materials
2Atomic force microscopy
2Binary compounds
2Coatings
2DLTS
2III-V compound
2Laser diodes
2Monolayers
2Nanostructured materials
2Optical properties
2Self assembly
1Activation energy
1Aluminium Gallium Arsenides Mixed
1Arsenides
1Atomic layer method
1Barrier layer
1Binary compound
1Bistability
1Buffer layer
1Charge carrier trapping
1Chemical composition
1Concentration effect
1Deformation
1Dislocations
1Doping
1Electrical properties
1Electron traps
1Electronic structure
1Epitaxy
1Experimental design
1Field effect transistor
1Gallium Arsenides
1Gates
1Heteroepitaxy
1Hole traps
1IV characteristic
1Illumination
1Indium Arsenides
1Indium Phosphides
1Indium compounds
1Interdiffusion
1Interface roughness
1Interface states
1Island structure
1Light emission
1Line shape
1Line widths
1Logic circuit
1Luminescence
1Morphology
1Multilayers
1Nanostructures
1Near infrared radiation
1Numerical simulation
1Optical microscopy
1Optoelectronic device
1Overlayers
1Photodiode
1Quantity ratio
1Quantum dot
1Quantum well lasers
1Quantum wells
1Rapid thermal annealing
1Rectification
1Reflectivity
1Ridge waveguides
1Roughness
1Semiconductor lasers
1Semiconductor quantum dots
1Solid solutions
1Stress relaxation
1Surface states
1Surfaces
1Temperature dependence
1Ternary compound
1Ternary compounds
1Thermal annealing
1Thin films
1Threshold current
1Transmission electron microscopy
1Two-dimensional electron gas
1Voltage current curve
1Waveguide lasers

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