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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Wen-Shiung Lour »
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Wen-Ray Chen < Wen-Shiung Lour < Wen-Ting Liu  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 6.
Ident.Authors (with country if any)Title
002150 (1999-12-01) Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors
002151 (1999-12-01) Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors
002192 (1999-04-12) Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors
002193 (1999-04-05) Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors
002649 (1995-07-17) Observation of the anomalous current-voltage characteristics of GaAs/n+-InGaAs/GaAs doped-channel structure
002673 (1995-03-20) Performance enhancement in a metal-insulator-semiconductor-like pseudomorphic transistor by utilizing an n--GaAs/n+-In0.2Ga0.8As two-layer structure

List of associated KwdEn.i

Nombre de
documents		Descripteur
6Experimental study
6Gallium arsenides
4III-V semiconductors
4Indium compounds
3High electron mobility transistors
3Schottky barriers
2Electrical conductivity
2Field effect transistors
2Gallium compounds
2Indium arsenides
2MOCVD
2Phosphorus compounds
1Capacitance
1Current density
1Doped materials
1Fabrication
1Heterostructures
1IV characteristic
1Insulated gate field effect transistors
1MIS junctions
1Performance
1Quantum wells
1Semiconductor heterojunctions
1Trapping
1Wide band gap semiconductors
1semiconductor device breakdown

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