Auteurs
Analysis
Chine
Racine
Analysis
Chine
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Wen-Lung Chang »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
Wen-Long Jiang < Wen-Lung Chang < Wen-Ming Su  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
001E74 (2001-01-15) Temperature Dependence of Gate Current and Breakdown Behaviors in an n+-GaAs/p+-InGaP/n--GaAs High-Barrier Gate Field-Effect Transistor
001F94 (2000-11) Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high electron mobility transistors
002150 (1999-12-01) Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors
002151 (1999-12-01) Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors
002181 (1999-07-05) Observation of the impulse-like negative-differential resistance of superlatticed resonant-tunneling transistor
002192 (1999-04-12) Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors
002193 (1999-04-05) Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors
002305 (1998-09-07) Application of δ-doped wide-gap collector structure for high-breakdown and low-offset voltage transistors

List of associated KwdEn.i

Nombre de
documents		Descripteur
8Experimental study
8Gallium arsenides
8Indium compounds
7III-V semiconductors
4Gallium compounds
4High electron mobility transistors
3Phosphorus compounds
3Schottky barriers
2Electric breakdown
2Electrical conductivity
2MOCVD
1Aluminium compounds
1Capacitance
1Current density
1Electrical properties
1Field effect transistors
1Heterojunction bipolar transistors
1High-temperature effects
1Insulated gate field effect transistors
1Leakage currents
1Minority carriers
1Resonant tunneling transistors
1Semiconductor heterojunctions
1Semiconductor superlattices
1Tunnel effect
1Wide band gap semiconductors
1semiconductor device breakdown

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i -k "Wen-Lung Chang" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
                -Sk "Wen-Lung Chang" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    Wen-Lung Chang
}}
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024