Wen-Chang Jiang < Wen-Chau Liu < Wen-Chen Zheng

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 22.
[0-20] [0 - 20][0 - 22][20-21][20-40]

Ident.	Authors (with country if any)	Title
001911 (2004-03)		Study of InGaP/InGaAs double delta-doped channel heterostructure field-effect transistors
001A39 (2004)		Characteristics of an InP-InGaAs-InGaAsP HBT
001A63 (2003-11)		Comparative hydrogen sensing performances of Pd- and Pt-InGaP metal-oxide-semiconductor Schottky diodes
001B18 (2003-01)		Study on dc characteristics of an interesting InP/InGaAs tunneling-emitter bipolar transistor with double heterostructures
001C83 (2002-05)		Study of InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistors
001E41 (2001-08-13)		Improved n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications
001E74 (2001-01-15)		Temperature Dependence of Gate Current and Breakdown Behaviors in an n+-GaAs/p+-InGaP/n--GaAs High-Barrier Gate Field-Effect Transistor
001F13 (2001)		Photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor
001F94 (2000-11)		Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high electron mobility transistors
002031 (2000-03)		Characteristics of InGaP/GaAs delta-doped heterojunction bipolar transistor
002150 (1999-12-01)		Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors
002151 (1999-12-01)		Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors
002177 (1999-07-26)		Applications of an In0.53Ga0.25Al0.22As/InP continuous-conduction-band structure for ultralow current operation transistors
002181 (1999-07-05)		Observation of the impulse-like negative-differential resistance of superlatticed resonant-tunneling transistor
002182 (1999-07)		Superlatticed negative differential-resistance heterojunction bipolar transistor
002192 (1999-04-12)		Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors
002193 (1999-04-05)		Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors
002305 (1998-09-07)		Application of δ-doped wide-gap collector structure for high-breakdown and low-offset voltage transistors
002649 (1995-07-17)		Observation of the anomalous current-voltage characteristics of GaAs/n+-InGaAs/GaAs doped-channel structure
002673 (1995-03-20)		Performance enhancement in a metal-insulator-semiconductor-like pseudomorphic transistor by utilizing an n--GaAs/n+-In0.2Ga0.8As two-layer structure
002674 (1995-03-15)		Characteristics of a GaAs-InGaAs quantum-well resonant-tunneling switch

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List of associated KwdEn.i

Nombre de documents	Descripteur
21	Gallium arsenides
20	Experimental study
16	Indium compounds
15	III-V semiconductors
9	Gallium compounds
6	Heterojunction bipolar transistors
6	Indium arsenides
4	Field effect transistors
4	High electron mobility transistors
3	Aluminium compounds
3	IV characteristic
3	Leakage currents
3	MOCVD
3	Phosphorus compounds
3	Quantum wells
3	Schottky barriers
3	Tunnel effect
3	semiconductor device breakdown
2	Current density
2	Electric breakdown
2	Electrical conductivity
2	Minority carriers
2	Resonant tunneling transistors
2	Semiconductor device breakdown
2	Semiconductor superlattices
2	Temperature effects
2	Voltage current curve
1	Aluminium arsenides
1	Arsenic compound
1	Binary compound
1	Bipolar transistors
1	Blocking
1	Breakdown point
1	Capacitance
1	Composite material
1	Conduction bands
1	Crystal doping
1	Current gain
1	Direct current
1	Doped materials
1	Doping profiles
1	Electrical characteristic
1	Electrical properties
1	Electrons
1	Experimental result
1	Fabrication
1	Gallium compound
1	Gas sensors
1	Heat of adsorption
1	Heterostructures
1	High-temperature effects
1	Hydrogen
1	Illumination
1	Indium compound
1	Indium phosphide
1	Instrumentation
1	Insulated gate field effect transistors
1	Interface states
1	Junction gate field effect transistors
1	MIS junctions
1	Microwave field effect transistors
1	Microwave power transistors
1	Negative differential conductivity
1	Negative resistance devices
1	Palladium
1	Performance
1	Performance evaluation
1	Phosphorus compound
1	Planar doping
1	Platinum
1	Power field effect transistors
1	Quaternary compound
1	Resonance
1	Schottky barrier diodes
1	Schottky effect
1	Semiconductor device measurement
1	Semiconductor growth
1	Semiconductor heterojunctions
1	Semiconductor switches
1	Spike potential
1	Switching
1	Ternary alloys
1	Ternary compound
1	Transistor collector
1	Trapping
1	Tunneling
1	VPE
1	Waveform
1	Wide band gap semiconductors
1	high-temperature electronics
1	low-power electronics

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