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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Wei-Chou Hsu »
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Wei-Chi Lai < Wei-Chou Hsu < Wei-Chou Wang  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
001887 (2004-05-03) Double-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor
001A62 (2003-11) Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base
001B01 (2003-05) Depletion- and enhancement-mode In0.49Ga0.51P/InGaAs/AlGaAs high-electron-mobility transistors with high-breakdown voltage
001D05 (2002-02-01) Characteristics of δ-doped InP heterostructures using In0.34Al0.66As0.85Sb0.15 Schottky layer
001E75 (2001-01-15) An Improved In0.34Al0.66As0.85Sb0.15/InP Heterostructure Utilizing Coupled δ-Doping InP Channel
001F96 (2000-10-15) High-Temperature Breakdown Characteristics of δ-Doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs High Electron Mobility Transistor
002443 (1997-10-15) Enhanced real-space transfer in δ-doped GaAs/In0.1Ga0.9As/In0.25Ga0.75As two-step channel heterojunctions
002467 (1997-02-24) Controllable drain cut-in voltage with strong negative differential resistance in GaAs/InGaAs real-space transfer heterostructure
002649 (1995-07-17) Observation of the anomalous current-voltage characteristics of GaAs/n+-InGaAs/GaAs doped-channel structure
002673 (1995-03-20) Performance enhancement in a metal-insulator-semiconductor-like pseudomorphic transistor by utilizing an n--GaAs/n+-In0.2Ga0.8As two-layer structure
002674 (1995-03-15) Characteristics of a GaAs-InGaAs quantum-well resonant-tunneling switch

List of associated KwdEn.i

Nombre de
documents		Descripteur
10Experimental study
9Gallium arsenides
8Indium compounds
7III-V semiconductors
4Aluminium compounds
4High electron mobility transistors
4MOCVD
4Semiconductor heterojunctions
3Field effect transistors
3Indium arsenides
3Schottky barriers
2Current density
2Electron mobility
2Gallium compounds
2Hall effect
2IV characteristic
2Quantum wells
2Semiconductor device measurement
2Semiconductor doping
2Semiconductor growth
1Antimony compounds
1Arsenic compounds
1CVD
1Conduction bands
1Crystal structure
1Doped materials
1Doping profiles
1Electric admittance
1Electric breakdown
1Electrical conductivity
1Etching
1Fabrication
1Heterojunction bipolar transistors
1Heterostructures
1Instrumentation
1Lattice parameters
1MIS junctions
1MOCVD coatings
1Microwave bipolar transistors
1Microwave field effect transistors
1Negative resistance devices
1Ohmic contacts
1Performance
1Phosphorus compounds
1Photoconductivity
1Photoluminescence
1Rapid thermal annealing
1Resonance
1Secondary ion mass spectra
1Semiconductor device breakdown
1Semiconductor switches
1Shubnikov-de Haas effect
1Temperature effects
1Ternary alloys
1Trapping
1VPE
1Wide band gap semiconductors
1XRD

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