Auteurs
Analysis
Chine
Racine
Analysis
Chine
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « WEI ZHOU »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
WEI ZHENG < WEI ZHOU < WEI-CHOU HSU  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
002215 (1999) Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces
002216 (1999) Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces
002234 (1999) Structural and optical characteristics of self-organized InAs quantum dots grown on GaAs (3 1 1)A substrates
002238 (1999) Size quantization effects in InAs self-assembled islands on InP(0 0 1) at the onset of 2D-to-3D transition
002246 (1999) Quantum-dot superluminescent diode : A proposal for an ultra-wide output spectrum
002268 (1999) In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates
002366 (1998) Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells
002407 (1998) Growth and characterization of InGaAs/InAlAs/InP high-electron-mobility transistor structures towards high channel conductivity

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Indium arsenides
6Experimental study
5Gallium arsenides
5Molecular beam epitaxy
5Self assembly
5Semiconductor materials
4Photoluminescence
4Quantum dots
4Ternary compounds
3Crystal growth from vapors
3Epitaxial layers
3Island structure
2Atomic force microscopy
2Binary compounds
2Characterization
2Chemical composition
2Composition effect
2Heteroepitaxy
2Size effect
2Solid solutions
2Thin films
2Two-dimensional systems
1Alignment
1Aluminium Arsenides
1Aluminium arsenides
1Binary compound
1Conductivity
1Crystal growth habit
1Crystal orientation
1Electron gas
1Excitation intensity
1Gallium Arsenides
1Growth mechanism
1Hall mobility
1High electron mobility transistor
1III-V compound
1III-V semiconductors
1Indium Arsenides
1Indium Phosphides
1Light emitting diode
1Microelectronic fabrication
1Modulation doping
1Molecular beam condensation
1Optical transition
1Order disorder
1Ordering
1Quantity ratio
1Quantization
1Quantum dot
1Quantum well
1Quantum wells
1Recombination
1Self organization
1Substrates
1Superluminescent diodes
1Temperature dependence
1Ternary compound
1Three-dimensional systems
1Transistor channel
1Wide band

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i -k "WEI ZHOU" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
                -Sk "WEI ZHOU" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    WEI ZHOU
}}
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024