Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « WANQI JIE »
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WANLU WANG < WANQI JIE < WANRONG ZHANG  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 17.
Ident.Authors (with country if any)Title
000166 (2013) Observation, morphology evolution and elimination of Te inclusions in CdZnTe:In single crystals
000317 (2013) Bridgman growth and defect characterization of large diameter mercury indium telluride crystals for near infrared detectors
000A79 (2010) Optical property analysis of CZT:In single crystals after annealing by a two-step method
000C76 (2009) Thermal treatment of indium-doped Cd1-xZnxTe single crystals
000D21 (2009) Study on temperature dependent resistivity of indium-doped cadmium zinc telluride
000E68 (2009) Faraday rotation in indium doped Cd1-xMnxTe single crystals
001132 (2008) High temperature x-ray diffraction study on phase transformation and lattice thermal expansion of mercury indium telluride crystals
001153 (2008) Etch pits observation and In distribution in mercury indium telluride single crystals
001201 (2008) Defect characterization and composition distributions of mercury indium telluride single crystals
001389 (2007) Growth, structure and electrical properties of mercury indium telluride single crystals
001392 (2007) Growth and characterization of In doped Cd0.8Mn0.2Te single crystal
001552 (2006) Single-crystal growth of mercury indium telluride (MIT) by vertical Bridgman method (VB)
001583 (2006) Optical and electrical properties of indium-doped Cd0.9Zn0.1Te crystal
001829 (2005) Effects of in doping on the properties of CdZnTe single crystals
001A09 (2004) Growth of In doped CdZnTe by vertical Bridgman method and the effect of In on the crystal properties
001A38 (2004) Characteristics of doped indium in Cd0.9Zn0.1Te grown by the Bridgman method
001D69 (2002) Growth behavior and crystal structures of different phases in MnxCd1-xIn2Te4 grown by Bridgman method

List of associated KwdEn.i

Nombre de
documents
Descripteur
13Bridgman method
11Monocrystals
10Electrical conductivity
9Crystal growth from melts
9Indium additions
8Cadmium tellurides
7Doping
7IV characteristic
7Indium tellurides
7Infrared spectra
7Zinc tellurides
6Mercury tellurides
5Experimental study
5Grain boundaries
5II-VI semiconductors
5Photoluminescence
5Segregation
5Transmittance
5XRD
4Etch pits
4Ternary compounds
3Absorption spectra
3Blende structure
3Cadmium compounds
3Crystal structure
3Hall effect
3Vacancies
2Annealing
2Cadmium
2Carrier density
2Carrier mobility
2Crystal defects
2Dislocation density
2Etching reagent
2Growth mechanism
2Manganese tellurides
2Microstructure
2Morphology
2Near infrared radiation
2Optical properties
2Rocking curve
2Semiconductor materials
2Wafers
1Analytical method
1Annealing temperature
1Brillouin zones
1Cadmium Manganese Tellurides Mixed
1Cadmium Zinc Tellurides Mixed
1Chemical composition
1Chemical etching
1Chemical method
1Complex defect
1Crystal chemistry
1Crystal lattices
1Crystal twin
1Crystalline phase
1Crystals
1Cubic lattices
1Deep level
1Defect states
1Differential scanning calorimetry
1Dilute magnetic materials
1Dispersive spectrometry
1Donor center
1Effective mass
1Electric resistivity
1Electrical properties
1Energy gap
1Energy levels
1Exchange interactions
1Faraday effect
1Fermi level
1Fourier transform spectra
1Free carrier
1Gamma radiation
1Growth defect
1Hall mobility
1Heat treatments
1Hexagonal lattices
1High temperature
1Impurities
1Impurity density
1Indium
1Inductively coupled plasma
1Infrared detectors
1Ingot
1Interband transitions
1Internal stresses
1Interstitial impurities
1Interstitials
1Lattice parameters
1Leakage currents
1Magnetic semiconductors
1Mechanical properties
1Mercury Indium Tellurides
1Ohmic contacts
1Optoelectronic properties
1Order-disorder transformations
1Phase studies
1Phase transformations

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