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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « W. Zhang »
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W. Zeng < W. Zhang < W. Zheng  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
001043 (2008) Self-pulsation in a two-section DFB laser with a varied ridge width
001A55 (2003-12-15) Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices
001F10 (2001) Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy
002007 (2000-07-10) Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy
002067 (2000) Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy
002075 (2000) Pressure behaviour of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots with multi-modal distribution in size
002144 (2000) A thermodynamic assessment of the Ga-In-P system
002160 (1999-11-08) Arsenic clusters on the surface of vertically aligned InAs islands on GaAs substrate by annealing
002252 (1999) Photosensitized electron injection from an ITO electrode to trichromophore dyes deposited on Langmuir-Blodgett films
002430 (1998) A thermodynamic assessment of the In-As-Sb system

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Experimental study
6III-V semiconductors
5Gallium arsenides
3Indium arsenides
3Indium compounds
3Molecular beam epitaxy
3Theoretical study
3Thin films
2Aluminium arsenides
2Crystal growth from vapors
2Gallium compounds
2Indium
2Isothermal section
2Multilayers
2Phase diagrams
2Phase equilibria
2Photoluminescence
2Quantum dots
2Ternary systems
2Thermodynamic model
2Thermodynamic properties
1Annealing
1Antimony
1Arsenic
1Atomic force microscopy
1Band offset
1Band structure
1Binary compounds
1Chromophores
1Computerized simulation
1Conduction bands
1Crystal perfection
1Desorption
1Distributed feedback lasers
1Dyes
1Effective mass
1Electric potential
1Electrodes
1Electrolytes
1Envelope function
1Experiments
1Fabrication structure relation
1Free radical reactions
1Gallium
1Gallium Arsenides
1Gallium Phosphides
1Gallium nitrides
1Indium Arsenides
1Indium Phosphides
1Indium nitrides
1Indium tin oxide
1Infrared laser
1Interaction parameter
1Interface states
1Iodine compounds
1Langmuir Blodgett films
1Localized states
1Modelling
1Monte Carlo methods
1Nanostructured materials
1Nanostructures
1Operating mode
1Optical anisotropy
1Oxygen
1Phonons
1Phosphorus
1Photocurrents
1Photosensitized electron injection
1Plasma deposition
1Plasma sources
1Pressure effects
1Pseudopotential methods
1Quantum wells
1Quantum wires
1Quasi-binary systems
1Quaternary compounds
1Raman spectra
1Reaction kinetics theory
1Self assembly
1Self organization
1Self-pulsing
1Semiconducting indium compounds
1Semiconductor epitaxial layers
1Semiconductor growth
1Semiconductor lasers
1Semiconductor materials
1Semiconductor superlattices
1Stoichiometry
1Surface segregation
1Synthesis (chemical)
1TEM
1Ternary compounds
1Trichromophore dyes
1Wide band gap semiconductors
1pH effects

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
                -Sk "W. Zhang" \
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