Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « W. Z. Shen »
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W. Z. Li < W. Z. Shen < W. Z. Wu  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 32.
[0-20] [0 - 20][0 - 32][20-31][20-40]
Ident.Authors (with country if any)Title
000C13 (2010) Deposition behavior on the barrier layer of porous anodic alumina
000E02 (2009) Multi-carrier transport properties in p-type ZnO thin films
000F82 (2008) Weak Localization in Indium Nitride Films
001277 (2007) Temperature-dependent photoluminescence of undoped, N-doped and N-in codoped ZnO thin films
001420 (2007) Electronic band structures and transport properties of wurtzite indium nitride grown by metalorganic vapor phase epitaxy
001673 (2006) Critical point transitions of wurtzite indium nitride
001933 (2004) Temperature effects on optical properties of InN thin films
001978 (2004) Optical and electrical properties of InN thin films grown by reactive magnetron sputtering
001984 (2004) Micro-raman study of hexagonal InN thin films grown by reactive sputtering on GaAs
001990 (2004) Lattice vibrational properties of InN thin films
001A16 (2004) Experimental studies of lattice dynamical properties in indium nitride
001C25 (2003) Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs
001D68 (2002) Growth-dependent phonon characteristics in InN thin films
001E07 (2002) A novel approach for the evaluation of band gap energy in semiconductors
002501 (1997) MBE growth and characterization of high-quality GaInAsSb/AlGaAsSb strained multiple quantum well structures
002548 (1996-11-01) Photoluminescence studies of InGaAs/InAlAs strained double quantum wells
002560 (1996-08-12) Demonstration of light-hole behavior in quaternary GaInAsSb/AlGaAsSb quantum wells using infrared photoluminescence spectroscopy
002581 (1996-01-01) Photoluminescence studies of InAs/InGaAs/AlAs strained single quantum well structures
002597 (1996) Photoluminescence studies of CuInSe2
002602 (1996) Optical properties of quaternary GaInAsSb/AlGaAsSb strained quantum wells
002604 (1996) Observation of excitonic polaritons in quaternary GaInAsSb/AlGaAsSb multiple quantum wells

List of associated KwdEn.i

Nombre de
documents
Descripteur
18Experimental study
13Gallium arsenides
13Photoluminescence
13Quantum wells
12Indium arsenides
11Absorption spectra
11Semiconductor materials
10Excitons
9Temperature dependence
9Thin films
8Indium nitrides
7Infrared spectra
7Ternary compounds
6Aluminium arsenides
6Binary compounds
6Gallium antimonides
6Line widths
5Aluminium antimonides
5III-V semiconductors
5Phonon-exciton interactions
5Temperature effects
4Band structure
4Energy gap
4Energy-level transitions
4Indium antimonides
4Quaternary compounds
4Raman spectra
4Strains
3Activation energy
3Cathode sputtering
3Critical points
3Electronic structure
3Internal strains
3Molecular beam epitaxy
3Optical properties
3Polaritons
3Recombination
3Reflection spectrum
3Stresses
3Urbach rule
3Vibrational modes
2Absorption coefficients
2Absorption spectroscopy
2Arrhenius equation
2Band offset
2Carrier density
2Codoping
2Doping
2Electron mobility
2Electron-phonon interactions
2Gallium Arsenides
2Indium Arsenides
2Indium additions
2Inorganic compounds
2Interband transitions
2Monocrystals
2Multiple quantum well
2Operating mode
2Optical phonons
2Phonon mode
2Plasmons
2Pressure effects
2Radiofrequency sputtering
2Reactive sputtering
2Subband
2XRD
1Acceptor donor pair
1Accumulation layers
1Actinides
1Aluminium Arsenides
1Aluminium oxide
1Anodizing
1Antimonides arsenides
1Arsenic additions
1Band gap energy
1Barrier layer
1Binding energy
1Blende structure
1Bound states
1Brillouin zones
1Capacitance
1Carrier mobility
1Characterization
1Charge carrier concentration
1Charge carrier recombination
1Chromium
1Coatings
1Compensation
1Conduction bands
1Copper selenides
1Correlation length
1Crystal growth from vapors
1Crystal perfection
1Crystallinity
1Damping
1Deep level
1Defect states
1Defects
1Degenerate semiconductor
1Dielectric function

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