W. W. Wu < W. Wang < W. Wu

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 22.
[0-20] [0 - 20][0 - 22][20-21][20-40]

Ident.	Authors (with country if any)	Title
000401 (2012)		Structure of AgI-doped Ge-In-S glasses: Experiment, reverse Monte Carlo modelling, and density functional calculations
000812 (2011)		InP-based deep-ridge NPN transistor laser
000815 (2011)		InGaAs/GaAs saturable absorber for diode-pumped passively Q-switched mode-locking of Tm,Ho:YVO4 laser
000D28 (2009)		Structure and optical properties of SnS thin film prepared by pulse electrodeposition
000E75 (2009)		Fabrication and modulation characteristics of 1.3 μm p-doped InAs quantum dot vertical cavity surface emitting lasers
000F52 (2009)		Anomalous coarsening of self-assembled InAs quantum dots on vicinal GaAs (100) substrates
000F53 (2009)		Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition
000F77 (2009)		1.3-μm InAs Quantum Dot Vertical Cavity Surface Emitting Lasers with Planar Electrodes Configuration
001400 (2007)		Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE
001495 (2007)		1.3 μm gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation
001588 (2006)		Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE
001589 (2006)		Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasers
001591 (2006)		Monolithic integration of electroabsorption modulator and DFB laser for 10-Gb/s transmission
001614 (2006)		High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD
001615 (2006)		High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD
001621 (2006)		Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties
001658 (2006)		Effect of GaAs(1 0 0) 2° surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots
001845 (2005)		Comparative study of InAs quantum dots grown on different GaAs substrates by MOCVD
002403 (1998)		Growth of Fe doped semi-insulating InP by LP-MOCVD
002415 (1998)		Effect of oxygen concentration and annealing treatment on the optical properties of the transparent conductive CdIn2O4 thin films
002435 (1998)		1.3μm InGaAsP/InP strained layer multi-quantum-well complex-coupled distributed feedback laser

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List of associated KwdEn.i

Nombre de documents	Descripteur
12	Indium arsenides
11	Gallium arsenides
9	III-V semiconductors
8	Binary compounds
8	Photoluminescence
8	Semiconductor lasers
7	Experimental study
7	MOCVD
7	Quantum dots
6	Multiple quantum well
6	Quaternary compounds
4	Aluminium arsenides
4	Gallium phosphides
4	Indium phosphides
4	MOVPE method
4	XRD
3	Distributed feedback lasers
3	Indium Arsenides
3	Indium Phosphides
3	Inorganic compounds
3	Low pressure
3	Nanostructured materials
3	Optical properties
3	Output power
3	Semiconductor materials
3	Temperature dependence
2	Ambient temperature
2	Annealing temperature
2	CVD
2	Doping
2	Energy gap
2	Frequency response
2	Gallium Arsenides
2	Growth mechanism
2	Optical materials
2	Oxides
2	Quantum well lasers
2	Quantum yield
2	Selective growth
2	Spectral line shift
2	Surface emitting lasers
2	Thickness
2	Threshold current
2	VPE
2	Vertical cavity laser
1	Absorption coefficients
1	Absorption spectra
1	Annealing
1	Application
1	Atomic force microscopy
1	Bit error rate
1	Blue shift
1	Buffer layer
1	Buried heterostructures
1	Cadmium compounds
1	Chalcogenide glasses
1	Comparative study
1	Conductive films
1	Critical value
1	Crystal growth from vapors
1	Crystal structure
1	Crystal-phase transformations
1	Current density
1	Density
1	Density distribution
1	Density functional method
1	Deposition rate
1	Diode pumping
1	Dispersive spectrometry
1	Distribution functions
1	Doped materials
1	EXAFS
1	Electroabsorption modulators
1	Electrodeposition
1	Energy barrier
1	Experiments
1	Fabrication
1	Far field
1	Feedback
1	Film growth
1	Finite size effect
1	Frequency measurement
1	Gain-coupled lasers
1	Germanium
1	Germanium additions
1	Glass structure
1	Grain size
1	Growth rate
1	High speed
1	High temperature
1	Holmium additions
1	III-V compound
1	Indium
1	Indium complexes
1	Indium compounds
1	Indium sulfide
1	Integrated optics
1	Interfaces
1	Iodine
1	Iron

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