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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « W. G. Tang »
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W. G. Sun < W. G. Tang < W. G. Wang  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 17.
Ident.Authors (with country if any)Title
002548 (1996-11-01) Photoluminescence studies of InGaAs/InAlAs strained double quantum wells
002560 (1996-08-12) Demonstration of light-hole behavior in quaternary GaInAsSb/AlGaAsSb quantum wells using infrared photoluminescence spectroscopy
002581 (1996-01-01) Photoluminescence studies of InAs/InGaAs/AlAs strained single quantum well structures
002597 (1996) Photoluminescence studies of CuInSe2
002602 (1996) Optical properties of quaternary GaInAsSb/AlGaAsSb strained quantum wells
002604 (1996) Observation of excitonic polaritons in quaternary GaInAsSb/AlGaAsSb multiple quantum wells
002618 (1996) Exciton line broadening and intersubband absorption in quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells
002629 (1995-12-04) Optical investigation of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells
002632 (1995-11-01) Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells
002651 (1995-07-15) Observation of excitonic polariton and broadening of room-temperature exciton in strained InGaAs/GaAs quantum wells
002701 (1995) Room-temperature excitons in strained InGaAs/GaAs quantum wells
002704 (1995) Photoluminescence studies of modulation-doped In0.60Ga0.40As/In0.52Al0.48As strained multiple quantum wells
002721 (1995) Exciton line broadening in strained InGaAs/GaAs single quantum wells
002738 (1994-11-21) Absorption spectroscopy studies of strained InGaAs/GaAs single-quantum wells
002776 (1994) optical and transport properties of δ-doped pseudomorphic AlGaAs/InGaAs/GaAs structures
002789 (1994) Optical studies of strained InGaAs/GaAs single quantum wells
002796 (1994) Influence of the cap layer thickness on photoluminescence properties in strained INGaAs/GaAs single quantum wells

List of associated KwdEn.i

Nombre de
documents		Descripteur
14Experimental study
12Quantum wells
11Gallium arsenides
11Indium arsenides
10Excitons
8Absorption spectra
8Photoluminescence
8Temperature dependence
6Ternary compounds
5Aluminium arsenides
5Gallium antimonides
5Line widths
5Phonon-exciton interactions
5Semiconductor materials
4Aluminium antimonides
4Infrared spectra
4Strains
3Binary compounds
3Energy-level transitions
3Indium antimonides
3Internal strains
3Molecular beam epitaxy
3Polaritons
3Recombination
3Stresses
2Activation energy
2Arrhenius equation
2Band offset
2Band structure
2Gallium Arsenides
2III-V semiconductors
2Indium Arsenides
2Interband transitions
2Quaternary compounds
2Subband
1Absorption spectroscopy
1Acceptor donor pair
1Aluminium Arsenides
1Antimonides arsenides
1Arsenic additions
1Bound states
1Charge carrier concentration
1Coatings
1Conduction bands
1Copper selenides
1Critical points
1Damping
1Dispersion relations
1Electrical properties
1Electron mobility
1Electronic structure
1Excitation spectrum
1Exciton phonon interaction
1Indium selenides
1Localized states
1Modulation doping
1Multijunction structure
1Optical properties
1P-type conductors
1Polycrystals
1Quantum well
1Quenching
1Stress relaxation
1Transport process
1Trapping

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