Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « W. Feng »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
W. F. Zhang < W. Feng < W. G. Bi  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
001400 (2007) Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE
001495 (2007) 1.3 μm gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation
001588 (2006) Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE
001589 (2006) Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasers
002544 (1996-11-15) High-pressure study of optical transitions in strained In0.2Ga0.8As/GaAs multiple quantum wells
002820 (1993) Structure of InxGa1-xAs/GaAs strained-layer superlattices
002886 (1992) Characterization of InxGa1-xAs/GaAs strained-layer superlattices by transmission electron microscopy and convergent beam electron diffraction
002902 (1991) Photomodulated transmission spectroscopy of the intersubband transitions in strained In1-xGaxAs/GaAs multiple quantum wells under hydrostatic pressure

List of associated KwdEn.i

Nombre de
documents
Descripteur
7Experimental study
5Gallium arsenides
5Indium arsenides
4Aluminium arsenides
4Multiple quantum well
3Chemical composition
3Quaternary compounds
2Binary compounds
2Gallium Arsenides
2Gallium Indium Arsenides Mixed
2III-V semiconductors
2Indium phosphides
2Inorganic compound
2MOVPE method
2Photoluminescence
2Quantum well lasers
2Quantum yield
2Semiconductor lasers
2Semiconductor materials
2Strained superlattice
1Buried heterostructures
1Confinement
1Crystal defect
1Dislocation
1Dislocation density
1Distributed feedback lasers
1Edge dislocations
1Effective mass
1Electron diffraction
1Energy gap
1Energy level
1Epitaxy
1Far field
1Feedback
1Gain-coupled lasers
1Gallium phosphides
1Growth from vapor
1Hydrostatic pressure
1Interband transition
1Interfaces
1Low pressure
1Masks
1Misfit dislocation
1Modulated structure
1Molecular beam condensation
1Nanostructured materials
1Optical absorption
1Optical materials
1Optical modulation
1Optical waveguides
1Optimization
1Periodicity
1Quantum effect
1Selective growth
1Solid solutions
1Strained quantum well
1Striation
1Subband
1Synchrotron radiation
1Ternary compounds
1Thickness
1Transmission electron microscopy
1VPE
1X-ray topography

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i -k "W. Feng" 
HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
                -Sk "W. Feng" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    W. Feng
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024