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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « W. C. Mitchel »
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W. C. Liu < W. C. Mitchel < W. C. Mitchell  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
001C90 (2002-04-15) Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures
002191 (1999-04-12) Effect of threading dislocations on electron transport in In0.24Ga0.76N/GaN multiple quantum wells
002303 (1998-09-15) Saturation spectroscopy and electronic-state lifetimes in a magnetic field in InAs/AlxGa1-xSb single quantum wells
002457 (1997-05-15) Effect of well thickness on the two-dimensional electron-hole system in AlxGa1-xSb/InAs quantum wells
002468 (1997-02-01) Multiple subband population in delta-doped AlAsSb/InGaAs heterostructures
002555 (1996-09-15) Effective mass of two-dimensional electron gas in δ-doped Al0.48In0.52As/Ga0.47In0.53As quantum wells
002631 (1995-11-15) Persistent-photoconductivity effect in δ-doped Al0.48In0.52As/Ga0.47In0.53As heterostructures
002685 (1995-02-06) Second subband population in δ-doped Al0.48In0.52As/Ga0.47In0.53As heterostructures
002748 (1994-08-22) Observation of a negative persistent photoconductivity effect in In0.25Ga0.75Sb/InAs quantum wells
002749 (1994-08-15) Electronic properties of AlxGa1-xSb/InAs quantum wells

List of associated KwdEn.i

Nombre de
documents		Descripteur
10Experimental study
6Shubnikov-de Haas effect
5Indium compounds
5Photoconductivity
4Aluminium compounds
4Gallium compounds
4III-V semiconductors
4Indium arsenides
3Band structure
3Carrier density
3Effective mass
3Gallium arsenides
3Quantum wells
3Semiconductor quantum wells
2Conduction bands
2Gallium antimonides
2Heterostructures
2Interface states
2Semiconductor heterojunctions
2Traps
1Aluminium antimonides
1Aluminium arsenides
1Antimony compounds
1Arsenic compounds
1Carrier lifetime
1Cyclotron resonance
1Defect states
1Dislocation scattering
1Dislocations
1Donors
1Doped materials
1Electron density
1Electron gas
1Electron-hole coupling
1Electronic structure
1Fermi level
1Hall mobility
1Indium antimonides
1Interface phenomena
1Landau levels
1Lifetime
1Magnetic field effects
1Magnetophonon effects
1Phase transformations
1Photoluminescence
1Piezoelectric semiconductors
1Quantum Hall effect
1TEM
1Temperature dependence
1Temperature range 0000-0013 K
1Ternary compounds
1Transmission electron microscopy
1Two-dimensional electron gas
1Wide band gap semiconductors

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
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