Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Tzer-En Nee »
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Tsz Wai Ng < Tzer-En Nee < Tzu-Chi Wen  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
001888 (2004-05) Study of lateral-carrier transport in InAs quantum-dot heterostructures by optical spectroscopy
001912 (2004-03) Phonon-Assisted Auger Recombination Processes in InGaAs/GaAs Single-Quantum-Well Lasers
001B00 (2003-05) Effect of current spreading on luminescence improvement in selectively oxidized AlGaInP light-emitting diodes
001C82 (2002-05) Thickness-dependent renormalization of strain effects on self-organized InAs quantum dots grown on GaAs
001C85 (2002-05) Growth and coalescence evolution of InAs on GaAs by molecular beam epitaxy
002206 (1999-01) Room-temperature operation of In0.5Ga0.5As as quantum dot lasers grown on misoriented GaAs substrates by molecular beam epitaxy
002209 (1999-01) Photoluminescence characteristics of self-assembled In0.5Ga0.5As quantum dots on vicinal GaAs substrates
002210 (1999-01) Excitation density and temperature dependent photoluminescence of InGaAs self-assembled quantum dots
002750 (1994-08-08) Molecular-beam epitaxial growth of InxAl1-xAs on GaAs

List of associated KwdEn.i

Nombre de
documents
Descripteur
9Experimental study
8Indium compounds
6Gallium arsenides
5Molecular beam epitaxy
5Photoluminescence
5Semiconductor quantum dots
4III-V semiconductors
3Infrared spectra
3self-assembly
2Transmission electron microscopy
1Aluminium arsenides
1Aluminium compounds
1Auger effect
1Carrier density
1Carrier mobility
1Crystal orientation
1Electroluminescence
1Electron-hole recombination
1Energy levels
1Gallium compounds
1Indium arsenides
1Laser variables measurement
1Light emitting diodes
1Line intensity
1Line narrowing
1Oxidation
1Quantum well lasers
1RHEED
1Radiation quenching
1Renormalization
1Self-assembly
1Semiconductor epitaxial layers
1Semiconductor growth
1Semiconductor heterojunctions
1Semiconductor lasers
1Size control
1Spectral line shift
1Substrates
1Surface reconstruction
1Temperature dependence
1Temperature range 0400-1000 K
1Ternary compounds
1distributed Bragg reflectors

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