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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « TAO WANG »
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TAO SONG < TAO WANG < TAO WU  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000439 (2012) Positron annihilation study on CuInSe2 solar cell thin films
000464 (2012) Microwave dielectric properties of a new ceramic system NdNbO4 with CaF2 addition
000757 (2011) Orthogonal optimization for room temperature magnetron sputtering of ZnO:Al films for all-solid electrochromic devices
000A79 (2010) Optical property analysis of CZT:In single crystals after annealing by a two-step method
000B23 (2010) Indium tin oxide thin films for silicon-based electro-luminescence devices prepared by electron beam evaporation method
000C76 (2009) Thermal treatment of indium-doped Cd1-xZnxTe single crystals
000D21 (2009) Study on temperature dependent resistivity of indium-doped cadmium zinc telluride
000E53 (2009) Growth and characterization of CuInSe2 thin films prepared by successive ionic layer adsorption and reaction method with different deposition temperatures
001026 (2008) Study on electroluminescence processes in dye-doped organic light-emitting diodes
001098 (2008) Many body interactions and dynamic shift of the absorption resonance wavelength in all-optical polarization switching of InGaAs(P) MQWs
001254 (2007) Ultrafast all-optical polarization switching based on "virtual excitation" of InGaAs(P) MQWs
001392 (2007) Growth and characterization of In doped Cd0.8Mn0.2Te single crystal
001583 (2006) Optical and electrical properties of indium-doped Cd0.9Zn0.1Te crystal
001829 (2005) Effects of in doping on the properties of CdZnTe single crystals
001A09 (2004) Growth of In doped CdZnTe by vertical Bridgman method and the effect of In on the crystal properties
001A38 (2004) Characteristics of doped indium in Cd0.9Zn0.1Te grown by the Bridgman method

List of associated KwdEn.i

Nombre de
documents		Descripteur
9Electrical conductivity
8Doping
8Indium additions
7Cadmium tellurides
7Zinc tellurides
6IV characteristic
6Infrared spectra
5Bridgman method
5Photoluminescence
5Ternary compounds
4Crystal growth from melts
4II-VI semiconductors
4Monocrystals
4Transmittance
3Absorption spectra
3Annealing
3Experimental study
3Microstructure
3Segregation
3Thin films
2Cadmium
2Cadmium compounds
2Chalcopyrite
2Defect states
2Film growth
2Grain boundaries
2Growth mechanism
2Multiple quantum well
2Nonlinear optics
2Optical polarization
2Optical properties
2Optical switching
2Phase space
2Precipitates
2Solar cells
2Temperature dependence
2Temperature effects
2Vacancies
1Adsorption
1All optical circuit
1Annealing temperature
1Band structure
1Blende structure
1Blue shift
1Cadmium Zinc Tellurides Mixed
1Carrier density
1Cathode sputtering
1Charge carrier recombination
1Charge carrier trapping
1Circular polarization
1Complex defect
1Controlled atmospheres
1Copper Indium Selenides Mixed
1Copper selenides
1Crystal growth
1Crystal lattices
1Crystal morphology
1Crystal structure
1Crystals
1Cubic lattices
1Deep level
1Dielectric ceramics
1Dielectric properties
1Diffusion
1Dispersive spectrometry
1Donor center
1Electrical properties
1Electrodeposition
1Electroluminescence
1Electron beam evaporation
1Electronic structure
1Energy gap
1Etch pits
1Exciton
1Excitons
1Femtosecond
1Fermi level
1Gallium Arsenides
1Gallium arsenides
1Gallium phosphides
1Gamma radiation
1Growth rate
1Hall effect
1Heat treatments
1Impurities
1Impurity density
1Indium
1Indium Arsenides
1Indium arsenides
1Indium phosphides
1Indium selenides
1Inductively coupled plasma
1Ingot
1Inorganic compounds
1Internal stresses
1Interstitial impurities
1Interstitials
1Layer thickness
1Leakage currents
1Light emitting diode

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