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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « T. N. Sun »
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T. N. Li < T. N. Sun < T. Okutani  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 6.
Ident.Authors (with country if any)Title
001804 (2005) Hydrogen indium vacancy complex VInH4 in n-type InP studied by positron-lifetime
001A42 (2004) Annealing ambient controlled deep defect formation in InP
002134 (2000) Carrier mobility distribution in annealed undoped LEC InP material
002296 (1998-11-15) Positron-lifetime study of compensation defects in undoped semi-insulating InP
002326 (1998-04-27) Formation of PIn defect in annealed liquid-encapsulated Czochralski InP
002989 (1985) Infrared reflectance study of n-type InP grown by the LEC method

List of associated KwdEn.i

Nombre de
documents		Descripteur
4Experimental study
4Semiconductor materials
3Annealing
3III-V semiconductors
3Indium phosphides
2Binary compounds
2Charge compensation
2Crystal growth from melts
2Czochralski method
2Deep energy levels
2Defect absorption spectra
2Defect formation
2Defect states
2Impurity absorption spectra
2Impurity states
2Indium compounds
2Infrared spectra
2Liquid encapsulation
2Positron annihilation
2Vacancies
1Carrier density
1Carrier mobility
1Charge carrier concentration
1Charge carrier mobility
1Complex defect
1Crystal defects
1DLTS
1Defect characterization
1Defect detection
1Donor center
1Fourier transform spectra
1Hall effect
1Heat treatments
1Illumination
1Impurity-defect interactions
1Impurity-vacancy interactions
1Indium Phosphides
1Infrared reflection
1Inorganic compound
1Ionization potential
1Photoinduction
1Point defects
1Single crystal
1Stoichiometry
1Temperature dependence
1Thermal annealing
1Thermostimulated conduction
1Valence

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
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