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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « T. M. Hsu »
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T. M. Cheng < T. M. Hsu < T. M. Huang  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
001886 (2004-05-10) Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature
001916 (2004-02-16) Electroreflectance study on the polarization field in InGaN/AlInGaN multiple quantum wells
001C55 (2002-11-15) Hole emission processes in InAs/GaAs self-assembled quantum dots
001C94 (2002-04-01) Scanning electron filling modulation reflectance of charged InGaAs self-assembled quantum dot
001D11 (2002-01-01) Direct measurement of piezoelectric field in In0.23Ga0.77N/GaN multiple quantum wells by electrotransmission spectroscopy
001E30 (2001-09-15) Charging of embedded InAs self-assembled quantum dots by space-charge techniques
001E60 (2001-03-19) Quantum-confined Stark shift in electroreflectance of InAs/InxGa1-xAs self-assembled quantum dots
001F88 (2000-11-15) Electron distribution and level occupation in an ensemble of InxGa1-xAs/GaAs self-assembled quantum dots
002000 (2000-09-15) Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots
002025 (2000-03-20) Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures
002037 (2000-02-07) Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing
002178 (1999-07-15) Electron-filling modulation reflectance in charged self-assembled InxGa1-xAs quantum dots
002977 (1986) Study of CuInS grown by the traveling-heater method by electrolyte electroreflectance

List of associated KwdEn.i

Nombre de
documents		Descripteur
13Experimental study
12III-V semiconductors
12Indium compounds
9Semiconductor quantum dots
7Gallium arsenides
4Photoluminescence
4Quantum confined Stark effect
4self-assembly
3Electroreflectance
3Reflectivity
3Wide band gap semiconductors
2Aluminium compounds
2Capacitance
2Electric admittance
2Excitons
2Gallium compounds
2Interface states
2Modulation spectra
2Self-assembly
2Semiconductor epitaxial layers
2Semiconductor quantum wells
2Tunnel effect
2Visible spectra
1Absorption coefficients
1Band structure
1Carrier density
1Chalcopyrite structure
1Chemical composition
1Chemical interdiffusion
1Copper Indium Sulfides Mixed
1Crystal orientation
1Dielectric polarization
1Electric moments
1Electro-optical effects
1Electronic structure
1Electrooptical reflection
1Energy gap
1Excited states
1Ground states
1Infrared spectra
1Inorganic compound
1Line narrowing
1Molecular beam epitaxy
1Photoconductivity
1Piezo-optical effects
1Piezoelectric semiconductors
1RHEED
1Raman spectra
1Rapid thermal annealing
1Semiconductor growth
1Semiconductor materials
1Semiconductor superlattices
1Single crystal
1Spectral line shift
1Spectral shift
1Transition metal Compounds
1Travelling heater method
1XRD

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