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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « T. Lin »
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T. Li < T. Lin < T. Liu  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
000073 (2013) Theoretical analysis of the inter-diffusion coefficients in the AlGaInP material quantum well intermixing
000619 (2012) Anomalous spin-orbit coupling in high-density two-dimensional electron gas confined in InGaAs/InAlAs quantum well
000B42 (2010) Gate-controlled electron-electron interactions in an In0.53Ga0.47As/InP quantum well structure
001092 (2008) Modified LPE technique growth and properties of long wavelength InAs0.05Sb0.95 thick film
001250 (2007) Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well
001318 (2007) Pseudospin in Si δ-doped InAlAs/InGaAs/InAlAs single quantum well
001329 (2007) Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion
001A08 (2004) Growth of heavily Zn-doped InGaAs at low temperature by LP-MOCVD
001A24 (2004) Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD

List of associated KwdEn.i

Nombre de
documents		Descripteur
6Quantum wells
5III-V semiconductors
4Gallium arsenides
4Indium arsenides
4Magnetoresistance
3Indium phosphide
3Magnetic field effects
3Oscillations
3Two-dimensional electron gas
2Aluminium arsenides
2CVD
2Carrier density
2Crystal growth from vapors
2Doping
2Experimental study
2Gallium Indium Arsenides Mixed
2Gallium phosphide
2Laser diodes
2MOCVD
2MOVPE method
2Planar doping
2Rashba effect
2Semiconductor materials
2Shubnikov-de Haas effect
2Spin-orbit interactions
2Ternary compounds
2Weak localisation
2Zinc
1Absorption coefficients
1Aluminium Indium Arsenides Mixed
1Aluminium phosphide
1Arsenic additions
1Asymmetry
1Beats
1Buffer layer
1Concentration distribution
1Diffusion
1Diffusion coefficient
1Distribution function
1Distribution functions
1Double barrier structure
1Drude model
1Electrical conductivity
1Electron mobility
1Electron-electron interactions
1Energy gap
1Epitaxial layers
1Fourier transform spectra
1High field
1Impurities
1Impurity diffusion
1Impurity effect
1Indium Arsenides
1Indium phosphides
1Infrared spectra
1Injection laser
1Interband transitions
1Interdiffusion
1Intermixing
1LPE
1Laser cavities
1Lattice dynamics
1Microelectronic fabrication
1Mirrors
1Modulation doping
1Multiple quantum well
1Nanostructured materials
1Non linear effect
1Output power
1Photoluminescence
1Potential well
1Pyrolysis
1Quaternary compounds
1Raman spectra
1Red shift
1SIMS
1Self consistency
1Semiconductor growth
1Semiconductor lasers
1Silicon additions
1Spectral line shift
1Subband
1Thick films
1Thickness
1Tunnel effect
1VPE
1Wafers
1XRD
1Zinc additions

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