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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « T. G. Andersson »
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T. Fukuda < T. G. Andersson < T. Gao  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 6.
Ident.Authors (with country if any)Title
002651 (1995-07-15) Observation of excitonic polariton and broadening of room-temperature exciton in strained InGaAs/GaAs quantum wells
002671 (1995-04-10) Photomodulated reflectance spectra of In0.2Ga0.8As/GaAs single quantum wells
002752 (1994-07-18) Influence of cap layer thickness on optical quality in In0.2Ga0.8As/GaAs single quantum wells
002859 (1992) Photoluminescence studies of InxGa1-xAs/GaAs strained quantum wells under hydrostatic pressure
002921 (1990) Phototransmission study of strained-layer InxGa1-xAs/GaAs single quantum well structures
002944 (1989) Photoluminescence of the residual shallow acceptor in InxGa1-xAs grown on GaAs(001) by molecular beam epitaxy

List of associated KwdEn.i

Nombre de
documents		Descripteur
6Experimental study
4Photoluminescence
3Gallium Arsenides
3Gallium Indium Arsenides Mixed
3Gallium arsenides
3Indium arsenides
3Inorganic compound
3Quantum wells
2Exciton
2Heterostructures
2Optical transition
2Semiconductor materials
2Strained quantum well
2Strains
1Absorption spectra
1Band structure
1Barrier height
1Binding energy
1Bound exciton
1Carbon
1Chemical composition
1Effective mass
1Energy-level transitions
1Envelope function
1Epitaxial film
1Excitons
1Hydrostatic pressure
1Internal strains
1Ionization potential
1Line widths
1Misfit dislocations
1Modulation spectroscopy
1Molecular beam condensation
1Molecular beam epitaxy
1Optical properties
1Optical transmission
1Phonon-exciton interactions
1Polaritons
1Reflection spectroscopy
1Room temperature
1Stress relaxation
1Temperature dependence
1Ternary compounds
1Thickness
1Thin film

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EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
                -Sk "T. G. Andersson" \
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