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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Shiou-Ying Cheng »
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Shing-Long Tyan < Shiou-Ying Cheng < Shiow-Fon Tsay  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
001911 (2004-03) Study of InGaP/InGaAs double delta-doped channel heterostructure field-effect transistors
001A39 (2004) Characteristics of an InP-InGaAs-InGaAsP HBT
001E74 (2001-01-15) Temperature Dependence of Gate Current and Breakdown Behaviors in an n+-GaAs/p+-InGaP/n--GaAs High-Barrier Gate Field-Effect Transistor
001F13 (2001) Photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor
002031 (2000-03) Characteristics of InGaP/GaAs delta-doped heterojunction bipolar transistor
002150 (1999-12-01) Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors
002151 (1999-12-01) Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors
002177 (1999-07-26) Applications of an In0.53Ga0.25Al0.22As/InP continuous-conduction-band structure for ultralow current operation transistors
002181 (1999-07-05) Observation of the impulse-like negative-differential resistance of superlatticed resonant-tunneling transistor
002182 (1999-07) Superlatticed negative differential-resistance heterojunction bipolar transistor
002305 (1998-09-07) Application of δ-doped wide-gap collector structure for high-breakdown and low-offset voltage transistors

List of associated KwdEn.i

Nombre de
documents		Descripteur
11Gallium arsenides
10Experimental study
9Indium compounds
8III-V semiconductors
6Heterojunction bipolar transistors
3Aluminium compounds
3Gallium compounds
3MOCVD
3Phosphorus compounds
2Electric breakdown
2Electrical conductivity
2Field effect transistors
2High electron mobility transistors
2Indium arsenides
2Minority carriers
2Resonant tunneling transistors
2Schottky barriers
2Semiconductor superlattices
2Voltage current curve
1Aluminium arsenides
1Arsenic compound
1Binary compound
1Blocking
1Breakdown point
1Composite material
1Conduction bands
1Current gain
1Direct current
1Doping profiles
1Electrical characteristic
1Electrical properties
1Electrons
1Experimental result
1Gallium compound
1High-temperature effects
1Illumination
1Indium compound
1Indium phosphide
1Interface states
1Leakage currents
1Negative differential conductivity
1Negative resistance devices
1Performance evaluation
1Phosphorus compound
1Planar doping
1Quaternary compound
1Schottky effect
1Semiconductor growth
1Spike potential
1Ternary compound
1Transistor collector
1Tunnel effect
1VPE
1Waveform
1low-power electronics
1semiconductor device breakdown

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