Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « S. Y. Liu »
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S. Y. Li < S. Y. Liu < S. Y. Shen  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
001796 (2005) Indium tin oxide surface treatments for improvement of organic light-emitting diode performance
001801 (2005) Improved performance of OLEDs with ITO surface treatments
001B24 (2003) Vibrational analysis of oxygen-plasma treated indium tin oxide
001F43 (2001) High-brightness white light-emitting organic electroluminescent devices using poly(N-vinylcarbazole) as a hole-transporter
001F69 (2001) Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers
001F73 (2001) Analysis of room temperature PL spectra of InAs/GaAs/InP and InAs/InP self-assembled QDs : A five-band study
002093 (2000) InP-based enhancement-mode pseudomorphic HEMT with strained In0.45Al0.55As barrier and In0.75Ga0.25As channel layers
002533 (1997) Analysis of coupling effect on valence band structures of strained multiple quantum wells
002609 (1996) Iron-doped semi-insulating InP grown by chloride VPE with nitrogen mixed with hydrogen as carrier gas

List of associated KwdEn.i

Nombre de
documents
Descripteur
4Experimental study
4Indium phosphides
3Gallium arsenides
3Indium arsenides
3Semiconductor lasers
2Binary compounds
2Current density
2Gallium phosphides
2Hall effect
2Indium oxide
2Light emitting diode
2Performance
2Quaternary compounds
2Seebeck effect
2Strained quantum well
2Ternary compounds
2Theoretical study
2Tin oxide
2Ultraviolet radiation
1Band structure
1Benzidine
1Carbazole(vinyl) polymer
1Charge carrier density
1Charge carrier mobility
1Chromaticity
1Conduction band discontinuity
1Crystal growth
1Delta doping
1Density of states
1Digital simulation
1Doped materials
1Electroluminescent device
1Electron energy loss spectra
1Energy gap
1Energy levels
1Experiments
1Fabrication
1Heterojunctions
1High electron mobility transistors
1High-resolution methods
1ITO layers
1Indium aluminum arsenide
1Indium oxides
1Iron additions
1Laser diodes
1Laser materials
1Material processing
1Matrix elements
1Molecular beam epitaxy
1Morphology
1Multiple quantum well
1Natural frequencies
1Optical characteristic
1Optical gain
1Oscillation frequency
1Ozone
1Photoluminescence
1Plasma assisted processing
1Quantization
1Quantum dots
1Quantum well lasers
1Quantum wells
1Roughness
1Schottky barrier diodes
1Schottky contact materials
1Self-assembled layers
1Semiconducting indium gallium arsenide
1Semiconducting indium phosphide
1Semiconductor device manufacture
1Semiconductor doping
1Semiconductor materials
1Spectral line shift
1Strain tensor
1Strained layer
1Surface treatment
1TDS
1Ternary compound
1Thin film device
1Threshold current
1Threshold voltage
1Tin oxides
1Transconductance
1VPE
1Valence bands
1White light
1Work function
1Work functions

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