Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « S. J. Xu »
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S. J. Wang < S. J. Xu < S. J. Yang  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 6.
Ident.Authors (with country if any)Title
000123 (2013) Radiative recombination of carriers in the GaxIn1-xP/GaAs double-junction tandem solar cells
001904 (2004-03-29) Interpretation of anomalous temperature dependence of anti-Stokes photoluminescence at GaInP2/GaAs interface
001B86 (2003) Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells
001E28 (2001-09-17) Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys
001F97 (2000-10-02) X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices
002506 (1997) Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures

List of associated KwdEn.i

Nombre de
documents
Descripteur
6Photoluminescence
5Experimental study
4III-V semiconductors
3Gallium arsenides
3Indium compounds
2Gallium compounds
2Ternary compounds
1Annealing
1Binary compounds
1Carrier density
1Chemical interdiffusion
1Concentration effect
1DLTS
1Defect states
1Dislocations
1Electroluminescence
1Electron-hole recombination
1Excitation spectrum
1Excitons
1Free carrier
1Gallium nitrides
1Gallium phosphide
1Heterostructures
1Indium arsenides
1Indium nitrides
1Indium phosphide
1Internal field
1Localized states
1MOCVD coatings
1Microstructure
1Molecular beam epitaxy
1Multiple quantum well
1Non radiative recombination
1Photovoltaic cell
1Potential barrier
1Pressure effects
1Radiative recombination
1Room temperature
1Screening
1Semiconductor epitaxial layers
1Semiconductor materials
1Semiconductor quantum dots
1Semiconductor superlattices
1Solar cell
1Spectral line shift
1Spectral shift
1TEM
1Tandem solar cell
1Ternary compound
1Thickness
1Traps
1Wide band gap semiconductors
1XRD
1p n junction
1self-assembly

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