Auteurs
Analysis
Chine
Racine
Analysis
Chine
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « S. J. Chang »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
S. J. Bai < S. J. Chang < S. J. Chen  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
001862 (2005) A novel transparent ohmic contact of indium tin oxide to n-type GaN
001890 (2004-05) InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer
001891 (2004-05) Growth of InGaN self-assembled quantum dots and their application to photodiodes
001914 (2004-02-23) Observation of spontaneous ordering in the optoelectronic material GaInNP
001997 (2004) InGaN/GaN multi-quantum dot light-emitting diodes
001B99 (2003) Growth of nanoscale InGaN self-assembled quantum dots
002311 (1998-07) Reactive ion etching for AlGalnP/GaInP laser structures
002677 (1995-03) High quality ZnO thin films on InP substrates prepared by radio frequency magnetron sputtering. II. Surface acoustic wave device fabrication
002678 (1995-03) High quality ZnO thin films on InP substrates prepared by radio frequency magnetron sputtering. I. Material study

List of associated KwdEn.i

Nombre de
documents		Descripteur
8Experimental study
6III-V semiconductors
4Gallium compounds
4Indium compounds
3MOCVD
3Nanostructured materials
3Photoluminescence
2Acoustic surface waves
2Aluminium compounds
2Crystal growth from vapors
2Gallium nitride
2High-frequency discharges
2Indium phosphides
2Integrated optics
2Self-assembly
2Semiconductor growth
2Sputtered materials
2Thin films
2Wide band gap semiconductors
2Zinc oxides
1Acousto-optical effects
1Annealing
1Auger effect
1CVD
1Chemical vapor deposition
1Contact resistance
1Dark conductivity
1Electric conductivity
1Electric contact
1Electroluminescence
1Exciton
1Fabrication property relation
1Gallium nitrides
1Hole density
1Indium nitride
1Indium nitrides
1Injection current
1Light emitting diode
1Light emitting diodes
1Line broadening
1Metal-semiconductor-metal structures
1Molecular beam epitaxy
1Multi-quantum dot
1Nanostructures
1Ohmic contact
1Operating mode
1Oxide layer
1Photodiodes
1Piezoreflectance
1Quantum dot
1Quantum dots
1Quantum well devices
1Quantum well lasers
1Radiofrequency sputtering
1Red shift
1Refractive index
1Self assembly
1Semiconductor epitaxial layers
1Semiconductor quantum dots
1Semiconductor quantum wells
1Semiconductor thin films
1Sequential method
1Sputter etching
1Surface layer
1Ternary compound
1Transmission electron microscopy
1Transparent material
1Tunnel effect
1Voltage current curve
1XRD
1n type semiconductor

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i -k "S. J. Chang" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
                -Sk "S. J. Chang" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    S. J. Chang
}}
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024