Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « S. C. Shen »
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S. C. Shei < S. C. Shen < S. C. Tse  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 29.
[0-20] [0 - 20][0 - 29][20-28][20-40]
Ident.Authors (with country if any)Title
001351 (2007) Multiple confined-state transitions within surface quantum dots by a piezomodulation reflectance study
001524 (2006) Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots
001A58 (2003-11-24) Enhancement of room-temperature photoluminescence in InAs quantum dots
001E21 (2001-11-15) Phonon-induced photoconductive response in doped semiconductors
002026 (2000-03-15) Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire
002333 (1998-03-23) Magnetospectroscopy of high-purity InP grown by gas source molecular beam epitaxy
002548 (1996-11-01) Photoluminescence studies of InGaAs/InAlAs strained double quantum wells
002552 (1996-10-15) Photothermal ionization identification of residual donors in high purity InP grown by gas source molecular beam epitaxy
002560 (1996-08-12) Demonstration of light-hole behavior in quaternary GaInAsSb/AlGaAsSb quantum wells using infrared photoluminescence spectroscopy
002581 (1996-01-01) Photoluminescence studies of InAs/InGaAs/AlAs strained single quantum well structures
002597 (1996) Photoluminescence studies of CuInSe2
002602 (1996) Optical properties of quaternary GaInAsSb/AlGaAsSb strained quantum wells
002604 (1996) Observation of excitonic polaritons in quaternary GaInAsSb/AlGaAsSb multiple quantum wells
002618 (1996) Exciton line broadening and intersubband absorption in quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells
002629 (1995-12-04) Optical investigation of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells
002632 (1995-11-01) Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells
002651 (1995-07-15) Observation of excitonic polariton and broadening of room-temperature exciton in strained InGaAs/GaAs quantum wells
002671 (1995-04-10) Photomodulated reflectance spectra of In0.2Ga0.8As/GaAs single quantum wells
002701 (1995) Room-temperature excitons in strained InGaAs/GaAs quantum wells
002703 (1995) Photomodulated transmission spectroscopy of InxGa1-xAs/GaAs MQWs under hydrostatic pressure
002704 (1995) Photoluminescence studies of modulation-doped In0.60Ga0.40As/In0.52Al0.48As strained multiple quantum wells

List of associated KwdEn.i

Nombre de
documents
Descripteur
23Experimental study
18Gallium arsenides
15Indium arsenides
15Quantum wells
12Photoluminescence
11Excitons
8Absorption spectra
8Temperature dependence
8Ternary compounds
6III-V semiconductors
6Semiconductor materials
5Aluminium arsenides
5Energy-level transitions
5Gallium antimonides
5Line widths
5Phonon-exciton interactions
5Strains
4Aluminium antimonides
4Band structure
4Binary compounds
4Indium compounds
4Infrared spectra
4Internal strains
4Molecular beam epitaxy
4Polaritons
4Subband
3Gallium Arsenides
3Indium antimonides
3Interband transitions
3Localized states
3Recombination
2Activation energy
2Arrhenius equation
2Band offset
2Heterostructures
2Indium Arsenides
2Multiple quantum well
2Optical modulation
2Quantum dots
2Quaternary compounds
2Semiconductor epitaxial layers
2Silicon
2Stress relaxation
2Stresses
2Temperature effects
2Theoretical study
1Absorption spectroscopy
1Acceptor donor pair
1Aluminium Arsenides
1Aluminium compounds
1Antimonides arsenides
1Arsenic additions
1Bethe-Salpeter equation
1Bound states
1Cadmium tellurides
1Charge carrier concentration
1Chemical composition
1Conduction bands
1Confinement
1Copper selenides
1Critical points
1Crystal defect
1Damping
1Dislocation
1Dispersion relations
1Doped materials
1Effective mass
1Eigenvalues and eigenfunctions
1Electrical properties
1Electron cyclotron resonance
1Electron hole pair
1Electron mobility
1Electron-phonon interactions
1Electronic density of states
1Electronic structure
1Energy gap
1Energy level
1Energy level population
1Energy levels
1Excitation spectrum
1Exciton phonon interaction
1Exciton-exciton interactions
1Fermi level
1Gallium Indium Arsenides Mixed
1Green's function methods
1Ground states
1Hybridization
1Hydrostatic pressure
1III-V compound
1Impurity states
1Indium Phosphides
1Indium additions
1Indium selenides
1Inorganic compound
1Interband transition
1Interface states
1Ion implantation
1Iron
1Line shape
1Manganese tellurides

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