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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Ray-Ming Lin »
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Ray-Kuang Lee < Ray-Ming Lin < Rehana Sharif  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
000023 (2014) Influence of Pre-trimethylindium flow treatment on blue light emitting diode
001888 (2004-05) Study of lateral-carrier transport in InAs quantum-dot heterostructures by optical spectroscopy
001912 (2004-03) Phonon-Assisted Auger Recombination Processes in InGaAs/GaAs Single-Quantum-Well Lasers
001B00 (2003-05) Effect of current spreading on luminescence improvement in selectively oxidized AlGaInP light-emitting diodes
001C82 (2002-05) Thickness-dependent renormalization of strain effects on self-organized InAs quantum dots grown on GaAs
001C85 (2002-05) Growth and coalescence evolution of InAs on GaAs by molecular beam epitaxy
001E67 (2001-02-15) Surface Passivation Using P2S5/(NH4)2Sx and Hydrogen Fluoride Solutions on Ag/n-InAs and Ag/n-InSb Schottky Diodes
001F93 (2000-11) Study of current leakage in InAs p-i-n photodetectors
002152 (1999-12-01) Barrier height enhancement of Ni/n-type InP Schottky contact using a thin praseodymium interlayer
002153 (1999-12-01) Barrier height enhancement of Ni/n-type InP Schottky contact using a thin praseodymium interlayer
002466 (1997-03) InAs room temperature infrared photoconductive detectors grown by molecular-beam epitaxy
002750 (1994-08-08) Molecular-beam epitaxial growth of InxAl1-xAs on GaAs

List of associated KwdEn.i

Nombre de
documents		Descripteur
11Experimental study
10Indium compounds
8III-V semiconductors
3Gallium arsenides
3Molecular beam epitaxy
3Schottky barriers
2Electrical conductivity
2Electrical properties
2Electroluminescence
2MOSFET
2Nickel
2Oxidation
2Phosphorus compounds
2Photodetectors
2Photoluminescence
2Rapid thermal annealing
2Semiconductor growth
2Semiconductor quantum dots
2Spectral line shift
2Transmission electron microscopy
2Wide band gap semiconductors
1Aggregation
1Aluminium arsenides
1Aluminium compounds
1Antimony compounds
1Arsenic compounds
1Auger effect
1Carrier density
1Carrier mobility
1Electron-hole recombination
1Gallium compounds
1Growth mechanism
1Indium
1Indium arsenides
1Infrared detectors
1Leakage currents
1Light emitting diode
1Light emitting diodes
1Line narrowing
1Measuring methods
1Nanostructured materials
1Optical properties
1Optoelectronic device
1Passivation
1Phase separation
1Photoconducting devices
1Pretreatment
1Quantum well
1Quantum well lasers
1RHEED
1Radiation quenching
1Redshift
1Renormalization
1Schottky barrier diodes
1Self-assembly
1Semiconductor epitaxial layers
1Semiconductor heterojunctions
1Semiconductor technology
1Silver
1Substrates
1Surface reconstruction
1Temperature dependence
1Temperature range 0400-1000 K
1Ternary compounds
1X ray diffraction
1distributed Bragg reflectors
1p i n photodiodes

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