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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « RUI WANG »
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List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
000406 (2012) Spectroscopic characteristics of 1.54 μm emission in Er/Yb:LiNbO3 crystals tridoped with In3+ ions
000A69 (2010) Photoluminescence investigation of InAs quantum dots in quantum well with different strain reducing layer
000E21 (2009) Investigation of microstructuring CuInGaSe2 thin films with ultrashort laser pulses
000E89 (2009) Electronic and optical properties of orthorhombic LiInS2 and LiInSe2: A density functional theory investigation
000F29 (2009) Defect structure and optical damage resistance of In:Fe:Cu:LiNbO3 crystals
001670 (2006) Defect structure and optical damage resistance of In:Mg:Fe:LiNbO3 crystals with various Li/Nb ratios
001729 (2005) Study on growth and storage properties of Zn :In:Fe:LinbO3 Crystals
001B63 (2003) Photo-refractive properties of Mg:In:Fe:LiNbO3 crystal
001B87 (2003) Investigation on photorefractive properties of In:Mn:Fe:LiNbO3
001D39 (2002) Research of spatial resolution in external electro-optic probing

List of associated KwdEn.i

Nombre de
documents		Descripteur
5Absorption spectra
5Codoping
5Experimental study
5Indium additions
4Iron additions
4Lithium niobates
3Doped materials
3Infrared spectra
3Semiconductor materials
3Ternary compounds
2Binary compounds
2Crystal growth from melts
2Czochralski method
2Defect structure
2Diffraction efficiency
2Doping
2Lithium Niobates
2Magnesium additions
2Photoluminescence
2Photorefractive effect
1Band structure
1Birefringence
1Branching ratio
1Chalcopyrite
1Circular polarization
1Copper Gallium Indium Selenides Mixed
1Copper additions
1Crystal defects
1Crystal structure
1Damage
1Density functional method
1Detection limit
1Dielectric function
1Dynamic properties
1Electro-optical effects
1Electronic structure
1Energy gap
1Erbium additions
1Excitation intensity
1Fluorescence
1Gallium Arsenides
1Holography
1Hybridization
1III-V semiconductors
1Impurities
1Indium Arsenides
1Indium addition
1Indium phosphides
1Integrated circuits
1Iron addition
1Judd-Ofelt theory
1Laser assisted processing
1Laser beams
1Laser pulse
1Lattice distortion
1Lithium Indium Selenides Mixed
1Lithium Indium Sulfides Mixed
1Luminescence decay
1Manganese additions
1Measurement sensor
1Measuring methods
1Monolayers
1Non linear material
1Nonlinear optics
1Operating mode
1Optical material
1Optical materials
1Optical storage
1Orthorhombic lattices
1Patterning
1Photoinduced effect
1Population inversion
1Quantity ratio
1Quantum wells
1Radiation damage
1Radiation polarization
1Radiative lifetimes
1Raman spectra
1Recording material
1Reflection spectrum
1Self-assembly
1Spatial resolution
1Strains
1Surface structure
1Surface treatments
1Temperature dependence
1Ternary compound
1Thin films
1Time resolution
1Tunnel effect
1Two wave mixing
1Two-photon processes
1Ultrashort pulse
1Voltage measurement
1XRD
1Ytterbium additions

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